Impurity effect on surface states of Bi (111) ultrathin films

doi:10.1088/1674-1056/25/8/087303

Abstract

The surface impurity effect on the surface-state conductivity and weak antilocalization (WAL) effect has been investigated in epitaxial Bi (111) films by magnetotransport measurements at low temperatures. The surface-state conductivity is significantly reduced by the surface impurities of Cu, Fe, and Co. The magnetotransport data demonstrate that the observed WAL is robust against deposition of nonmagnetic impurities, but it is quenched by the deposition of magnetic impurities which break the time reversal symmetry. Our results help to shed light on the effect of surface impurities on the electron and spin transport properties of a 2D surface electron systems.

Keywords: bismuth weak antilocalization surface states

Received: 26 May 2016
Revised: 31 May 2016
Accepted manuscript online:

PACS:	73.25.+i	(Surface conductivity and carrier phenomena)
	71.30.+h	(Metal-insulator transitions and other electronic transitions)
	73.50.-h	(Electronic transport phenomena in thin films)

Fund:

Project supported by the National Basic Research Program of China (Grants Nos. 2015CB921400 and 2011CB921802) and the National Natural Science Foundation of China (Grants Nos. 11374057, 11434003, and 11421404).

Corresponding Authors: Xiaofeng Jin
E-mail: xfjin@fudan.edu.cn

Cite this article:

Kai Zhu(朱凯), Dai Tian(田岱), Lin Wu(伍琳), Jianli Xu(许建丽), Xiaofeng Jin(金晓峰) Impurity effect on surface states of Bi (111) ultrathin films 2016 Chin. Phys. B 25 087303

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