| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Phase induced localization transition |
| Tong Liu(刘通)1, Xingbo Wei(魏兴波)2,†, and Youguo Wang(王友国)1,‡ |
1 School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;
2 Department of Physics and Key Laboratory of Optical Field Manipulation of Zhejiang Province, Zhejiang Sci-Tech University, Hangzhou 310018, China |
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Abstract Localization phenomenon is an important research field in condensed matter physics. However, due to the complexity and subtlety of disordered systems, new localization phenomena always emerge unexpectedly. For example, it is generally believed that the phase of the hopping term does not affect the localization properties of the system, so the calculation of the phase is often ignored in the study of localization. Here, we introduce a quasiperiodic model and demonstrate that the phase change of the hopping term can significantly alter the localization properties of the system through detailed numerical simulations, such as the inverse participation ratio and multifractal analysis. This phase-induced localization transition provides valuable information for the study of localization physics.
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Received: 31 May 2024
Revised: 17 July 2024
Accepted manuscript online: 01 August 2024
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PACS:
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71.23.Ft
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(Quasicrystals)
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71.10.Fd
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(Lattice fermion models (Hubbard model, etc.))
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71.23.An
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(Theories and models; localized states)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 62071248), the Zhejiang Provincial Natural Science Foundation of China (Grant No. LQ24A040004), Natural Science Foundation of Nanjing University of Posts and Telecommunications (Grant No. NY223109), and China Postdoctoral Science Foundation (Grant No. 2022M721693). |
Corresponding Authors:
Xingbo Wei, Youguo Wang
E-mail: weixingbo@zstu.edu.cn;wangyg@njupt.edu.cn
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Cite this article:
Tong Liu(刘通), Xingbo Wei(魏兴波), and Youguo Wang(王友国) Phase induced localization transition 2024 Chin. Phys. B 33 107103
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