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Chin. Phys. B, 2024, Vol. 33(10): 107104    DOI: 10.1088/1674-1056/ad74e7
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Strain tunable excitonic optical properties in monolayer Ga2O3

Hao-Lei Cui(崔浩磊), Zhen Quan(权真), and Shu-Dong Wang(王舒东)†
School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
Abstract  Two-dimensional (2D) Ga2O3 has been confirmed to be a stable structure with five atomic layer thickness configuration. In this work, we study the quasi-particle electronic band structures and then access the excitonic optical properties through solving the Bethe-Salpeter equation (BSE). The results reveal that the exciton dominates the optical absorption in the visible light region with the binding energy as large as 1.0 eV, which is highly stable at room temperature. Importantly, both the dominant absorption P1 and P2 peaks are optically bright without dark exciton between them, and thus is favorable for luminescence process. The calculated radiative lifetime of the lowest-energy exciton is 2.0×1011 s at 0 K. Furthermore, the radiative lifetime under +4% tensile strain is one order of magnitude shorter than that of the strain-free case, while it is less insensitive under the compressive strain. Our findings set the stage for future theoretical and experimental investigation on monolayer Ga2O3.
Keywords:  excitons      radiative lifetime      Ga2O3  
Received:  08 July 2024      Revised:  24 August 2024      Accepted manuscript online:  29 August 2024
PACS:  71.35.-y (Excitons and related phenomena)  
  71.35.Cc (Intrinsic properties of excitons; optical absorption spectra)  
  31.15.ag (Excitation energies and lifetimes; oscillator strengths)  
  73.43.Cd (Theory and modeling)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 12064032).
Corresponding Authors:  Shu-Dong Wang     E-mail:  sdwang@imu.edu.cn

Cite this article: 

Hao-Lei Cui(崔浩磊), Zhen Quan(权真), and Shu-Dong Wang(王舒东) Strain tunable excitonic optical properties in monolayer Ga2O3 2024 Chin. Phys. B 33 107104

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