Abstract Van der Waals heterostructures based on the two-dimensional (2D) semiconductor materials have attracted increasing attention due to their attractive properties. In this work, we demonstrate a high-sensitive back-gated phototransistor based on the vertical HfSe2/MoS2 heterostructure with a broad-spectral response from near-ultraviolet to near-infrared and an efficient gate tunability for photoresponse. Under bias, the phototransistor exhibits high responsivity of up to 1.42×103 A/W, and ultrahigh specific detectivity of up to 1.39×1015 cm·Hz1/2·W-1. Moreover, it can also operate under zero bias with remarkable responsivity of 10.2 A/W, relatively high specific detectivity of 1.43×1014 cm·Hz1/2·W-1, ultralow dark current of 1.22 fA, and high on/off ratio of above 105. These results should be attributed to the fact that the vertical HfSe2/MoS2 heterostructure not only improves the broadband photoresponse of the phototransistor but also greatly enhances its sensitivity. Therefore, the heterostructure provides a promising candidate for next generation high performance phototransistors.
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51702245) and the Fundamental Research Funds for the Central Universities (Grant No. WUT2021III065JC).
Wen Deng(邓文), Li-Sheng Wang(汪礼胜), Jia-Ning Liu(刘嘉宁), Tao Xiang(相韬), and Feng-Xiang Chen(陈凤翔) High-sensitive phototransistor based on vertical HfSe2/MoS2 heterostructure with broad-spectral response 2022 Chin. Phys. B 31 128502
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