| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
Design and investigation of doping-less gate-all-around TFET with Mg2Si source material for low power and enhanced performance applications |
| Pranav Agarwal, Sankalp Rai, Rakshit Y. A, and Varun Mishra† |
| Graphic Era(deemed to be university), Dehradun, Uttarakhand, India |
|
|
|
|
Abstract Metal-oxide-semiconductor field-effect transistor (MOSFET) faces the major problem of being unable to achieve a subthreshold swing (SS) below 60 mV/dec. As device dimensions continue to reduce and the demand for high switching ratios for low power consumption increases, the tunnel field-effect transistor (TFET) appears to be a viable device, displaying promising characteristic as an answer to the shortcomings of the traditional MOSFET. So far, TFET designing has been a task of sacrificing higher ON state current for low subthreshold swing (and $vice versa$), and a device that displays both while maintaining structural integrity and operational stability lies in the nascent stages of popular research. This work presents a comprehensive analysis of a heterojunction plasma doped gate-all-around TFET (HPD-GAA-TFET) by making a comparison between Mg$_{2}$Si and Si which serve as source materials. Charge plasma technique is employed to implement doping in an intrinsic silicon wafer with the help of suitable electrodes. A low-energy bandgap material, i.e. magnesium silicide is incorporated as source material to form a heterojunction between source and silicon-based channel. A rigorous comparison of performance between Si-based GAA-TFET and HPD-GAA-TFET is conducted in terms of electrical, radio frequency (RF), linearity, and distortion parameters. It is observable that HPD-GAA-TFET outperforms conventional Si-based GAA-TFET with an ON-state current ($I_{\rm ON}$), subthreshold swing (SS), threshold voltage ($V_{\rm th}$), and current switching ratio being 0.377 mA, 12.660 mV/dec, 0.214 V, and $2.985\times 10^{12}$, respectively. Moreover, HPD-GAA-TFET holds faster switching and is more reliable than Si-based device. Therefore, HPD-GAA-TFET is suitable for low-power applications.
|
Received: 10 January 2023
Revised: 30 April 2023
Accepted manuscript online: 16 May 2023
|
|
PACS:
|
73.40.Lq
|
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
|
|
Corresponding Authors:
Varun Mishra
E-mail: varun20mishra@gmail.com
|
Cite this article:
Pranav Agarwal, Sankalp Rai, Rakshit Y. A, and Varun Mishra Design and investigation of doping-less gate-all-around TFET with Mg2Si source material for low power and enhanced performance applications 2023 Chin. Phys. B 32 107310
|
[1] Mamidala J K, Vishnoi R and Pandey P 2016 Tunnel Field-effect Transistors (TFET): Modelling and Simulation
[2] Vishnoi R and Kumar M J 2014 IEEE Trans. Electron Dev.
[3] Goyal P, Madan J, Srivastava G, Pandey R and Gupta R S 2022 Silicon 14 8097
[4] Association S I, et al. 2014 International Technology Roadmap for Semiconductors
[5] Vishnoi R and Kumar M J 2014 IEEE Trans. Electron Dev. 61 2599
[6] Madan J, Pandey R and Chaujar R 2018 Mater. Today Proc. 5 17453
[7] Madan J, Dassi M, Pandey R, Chaujar R and Sharma R 2020 Superlattices Microstruct. 139 106397
[8] Satyala N and Vashaee D 2012 Appl. Phys. Lett. 100 7
[9] Kumar N and Raman A 2019 IEEE Trans. Electron Devices 66 4453
[10] Verma P K, Verma Y K, Mishra V and Gupta S K 2020 J. Comput. Electron. 19 1085
[11] Roy N C, Gupta A and Rai S 2015 Microelectronics J. 46 916
[12] Gupta V, Kumar N, Awasthi H, Rai S, Pandey A K and Gupta A 2021 J. Electron. Mater. 50 3686
[13] Mishra V, Verma Y K, Gupta S K and Rathi V 2021 Silicon 2021
[14] Verhulst A S, Sorée B, Leonelli D, Vandenberghe W G and Groeseneken G 2010 J. Appl. Phys. 107 2010
[15] Silvaco T and CAD Version, ATLAS 5.19. 20. R, 2020
[16] Okumura T and Jp O, (12) United States Patent (45) Date of Patent:, vol. 2, no. 12, 2008
[17] Wu Y, et al. 2014 Microelectron. Reliab. 54 899
[18] Bangsaruntip S, Balakrishnan K, Cheng S L, Chang J, Brink M, Lauer I, Bruce R L, et al. 2013 IEEE International Electron Devices Meeting, pp. 20-22
[19] Gracia D, Nirmal D and Nisha Justeena A 2017 Superlattices Microstruct. 109 154
[20] Paras N and Chauhan S S 2019 Microelectron. Eng. 217 111103
[21] Shih C H and Chien N D 2011 IEEE Electron Device Lett. 32 1498
[22] Avci U E and Young I A 2013 Tech. Dig. - Int. Electron Devices Meet. IEDM, pp. 96-99
[23] Jiao G F, Chen Z X, Yu H Y, Huang X Y, Huang D M, Singh N, Lo G Q, Kwong D L and Li M F 2009 IEEE International Electron Devices Meeting (IEDM), pp. 1-4
[24] Mishra V, Verma Y K, Agarwal L and Gupta S K 2021 Eng. Res. Express 3
[25] Wangkheirakpam V D, Bhowmick B and Pukhrambam P D 2021 Appl. Phys. A Mater. Sci. Process. 127 1
[26] Goswami P P, Khosla R and Bhowmick B 2019 Appl. Phys. A Mater. Sci. Process. 125 1 |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
