| INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications |
| Xiaoyu Pan(潘霄宇)1,2, Hongxia Guo(郭红霞)2,†, Yahui Feng(冯亚辉)3, Yinong Liu(刘以农)1, Jinxin Zhang(张晋新)4, Jun Fu(付军)5, and Guofang Yu(喻国芳)5 |
1 The Key Laboratory of Particle and Radiation Imaging, Ministry of Education, Department of Engineering Physics, Tsinghua University, Beijing 100084, China;
2 State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China;
3 School of Material Science and Engineering, Xiangtan University, Xiangtan 411105, China;
4 School of Aerospace Science and Technology, Xidian University, Xi'an 710126, China;
5 School of Integrated Circuits, Tsinghua University, Beijing 100084, China |
|
|
|
|
Abstract We experimentally demonstrate that the dominant mechanism of single-event transients in silicon-germanium heterojunction bipolar transistors (SiGe HBTs) can change with decreasing temperature from +20 ℃ to -180 ℃. This is accomplished by using a new well-designed cryogenic experimental system suitable for a pulsed-laser platform. Firstly, when the temperature drops from +20 ℃ to -140 ℃, the increased carrier mobility drives a slight increase in transient amplitude. However, as the temperature decreases further below -140 ℃, the carrier freeze-out brings about an inflection point, which means the transient amplitude will decrease at cryogenic temperatures. To better understand this result, we analytically calculate the ionization rates of various dopants at different temperatures based on Altermatt's new incomplete ionization model. The parasitic resistivities with temperature on the charge-collection pathway are extracted by a two-dimensional (2D) TCAD process simulation. In addition, we investigate the impact of temperature on the novel electron-injection process from emitter to base under different bias conditions. The increase of the emitter-base junction's barrier height at low temperatures could suppress this electron-injection phenomenon. We have also optimized the built-in voltage equations of a high current compact model (HICUM) by introducing the impact of incomplete ionization. The present results and methods could provide a new reference for effective evaluation of single-event effects in bipolar transistors and circuits at cryogenic temperatures, and could provide a new evidence of the potential of SiGe technology in applications in extreme cryogenic environments.
|
Received: 21 September 2022
Revised: 30 November 2022
Accepted manuscript online: 09 December 2022
|
|
PACS:
|
85.30.Pq
|
(Bipolar transistors)
|
| |
61.80.Az
|
(Theory and models of radiation effects)
|
| |
73.40.Lq
|
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
|
| |
75.40.Mg
|
(Numerical simulation studies)
|
|
| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61704127 and 11775167). |
Corresponding Authors:
Hongxia Guo
E-mail: guohxnint@126.com
|
Cite this article:
Xiaoyu Pan(潘霄宇), Hongxia Guo(郭红霞), Yahui Feng(冯亚辉), Yinong Liu(刘以农), Jinxin Zhang(张晋新), Jun Fu(付军), and Guofang Yu(喻国芳) Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications 2023 Chin. Phys. B 32 098503
|
[1] Cressler J D 2010 IEEE Transactions on Device and Materials Reliability 10 437
[2] Lourenco N E, Fleetwood Z E, Ildefonso A, Wachter M T, Roche N J H, Khachatrian A, McMorrow D, Buchner S P, Warner J H, Itsuji H, Kobayashi D, Hirose K, Paki P, Raman A and Cressler J D 2017 IEEE Trans. Nucl. Sci. 64 406
[3] Sutton A, Moen K, Cressler J D, Carts M, Marshall P, Pellish J, Ramachandran V, Reed R, Alles M and Niu G 2008 Solid-State Electronics 52 1652
[4] Laird J S, Hirao T, Onoda S, Mori H and Itoh H 2002 IEEE Trans. Nucl. Sci. 49 1389
[5] Laird J S, Onoda S and Hirao T 2008 J. Appl. Phys. 104 084510
[6] Ramachandran V, Gadlage M, Ahlbin J, Narasimham B, Alles M, Reed R, Bhuva B, Massengill L, Black J and Foster C 2010 Solid-State Electronics 54 1052
[7] Xu Z, Niu G, Luo L, Cressler J D, Alles M L, Reed R, Mantooth H A, Holmes J and Marshall P W 2010 IEEE Trans. Nucl. Sci. 57 3206
[8] Knudson A R, Campbell A B, Hauser J R, Jessee M, Stapor W J and Shapiro P 1986 IEEE Trans. Nucl. Sci. 33 1560
[9] Schröter M and Chakravorty A 2010 Compact Hierarchical Bipolar Transistor Modeling With HiCUM (Singapore: World Scientific) p. 752
[10] Laird J S, Hirao T, Mori H, Onoda S, Kamiya T and Itoh H 2001 NIMPB 181 87
[11] Melinger J S, Buchner S, McMorrow D, Stapor W J, Weatherford T R, Campbell A B and Eisen H 1994 IEEE Trans. Nucl. Sci. 41 2574
[12] Hales J M, Cressler J D, McMorrow D, Khachatrian A, Buchner S, Warner J, Ildefonso A, Tzintzarov G N, Nergui D, Monahan D M and Lalumondiere S D 2020 IEEE Trans. Nucl. Sci. 67 81
[13] Svantesson K G and Nilsson N G 1979 Journal of Physics C: Solid State Physics 12 3837
[14] Zacharias M and Kelires P C 2020 Phys. Rev. B 101 245122
[15] Laird J S, Chen Y, Scheick L, Vo T and Johnston A 2008 Rev. Sci. Instrum. 79 083705
[16] Pan X, Guo H, Feng Y, Liu Y, Zhang J, Li Z, Luo Y, Zhang F, Wang T, Zhao W, Ding L and Xu J 2022 Science China Technological Sciences 65 1193
[17] Palomo F R, Mogollon J M, Napoles J and Aguirre M A 2010 IEEE Trans. Nucl. Sci. 57 1884
[18] Pouget V, Lapuyade H, Fouillat P, Lewis D and Buchner S 2001 Microelectronics Reliability 41 1513
[19] Buchner S P, Miller F, Pouget V and McMorrow D P 2013 IEEE Trans. Nucl. Sci. 60 1852
[20] Hales J M, Khachatrian A, Buchner S, Roche N J H, Warner J, Fleetwood Z E, Ildefonso A, Cressler J D, Ferlet-Cavrois V and McMorrow D 2018 IEEE Trans. Nucl. Sci. 65 1724
[21] Pires R G, Dickstein R M, Titcomb S L and Anderson R L 1990 Cryogenics 30 1064
[22] Loveless T D, Reising D R, Cancelleri J C, Massengill L W and McMorrow D 2021 IEEE Trans. Nucl. Sci. 68 1600
[23] Klaassen D B M 1992 Solid State Electronics 35 961
[24] Jacoboni C, Canali C, Ottaviani G and Alberigi Quaranta A 1977 Solid-State Electronics 20 77
[25] Slotboom J W and de Graaff H C 1976 Solid State Electronics 19 857
[26] Herbert D C 1996 Fundamentals of Semiconductors: Physics and Materials Properties, Vol. 11 p. 018
[27] Dash W C and Newman R 1955 Phys. Rev. 99 1151
[28] Zhang J X, He C H, Guo H X, Li P, Guo B L and Wu X X 2017 Chin. Phys. B 26 088502
[29] Khachatrian A, Roche N J H, Dodds N A, McMorrow D, Warner J H, Buchner S P and Reed R A 2015 IEEE Trans. Nucl. Sci. 62 2452
[30] Altermatt P P, Schenk A and Heiser G 2006 J. Appl. Phys. 100 113714
[31] Altermatt P P, Schenk A, Schmithüsen B and Heiser G 2006 J. Appl. Phys. 100 113715
[32] Luo L, Niu G, Moen K A and Cressler J D 2009 IEEE Trans. Electron Devices 56 2169
[33] Mott N F 1968 Rev. Mod. Phys. 40 677
[34] Rosling M, Bleichner H, Jonsson P and Nordlander E 1994 J. Appl. Phys. 76 2855
[35] Dhariwal S R and Ojha V N 1982 Solid-State Electronics 25 909 |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
