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Chin. Phys. B, 2023, Vol. 32(7): 078504    DOI: 10.1088/1674-1056/ac9cbb
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

High on-state current p-type tunnel effect transistor based on doping modulation

Jiale Sun(孙佳乐)1, Yuming Zhang(张玉明)1, Hongliang Lu(吕红亮)1,†, Zhijun Lyu(吕智军)2, Yi Zhu(朱翊)1, Yuche Pan(潘禹澈)1, and Bin Lu(芦宾)3
1 School of Microelectronics, Xidian University, The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xi'an 710071, China;
2 Department of Integrated Circuit Design, Institute of Microelectronics Technology, Xi'an 710071, China;
3 School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030031, China
Abstract  To solve the problem of the low on-state current in p-type tunnel field-effect transistors (p-TFETs), this paper analyzes the mechanism of adjusting the tunneling current of a TFET device determined by studying the influence of the peak position of ion implantation on the potential of the p-TFET device surface and the width of the tunneling barrier. Doping-regulated silicon-based high on-state p-TFET devices are designed and fabricated, and the test results show that the on-state current of the fabricated devices can be increased by about two orders of magnitude compared with the current of other devices with the same structure. This method provides a new idea for the realization of high on-state current TFET devices.
Keywords:  tunnel field-effect transistors (TFET)      band-to-band tunneling (BTBT)      on-state current      doping modulation  
Received:  08 July 2022      Revised:  22 September 2022      Accepted manuscript online:  21 October 2022
PACS:  85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))  
  85.40.Ry (Impurity doping, diffusion and ion implantation technology)  
  73.40.Gk (Tunneling)  
Fund: Project supported by the Key Research and Development Program of Shaanxi (Grant No. 2021GY-010) and the National Defense Science and Technology Foundation Strengthening Program of China (Grant No. 2019-XXXX-XX-236-00).
Corresponding Authors:  Hongliang Lu     E-mail:  hllv@mail.xidian.edu.cn

Cite this article: 

Jiale Sun(孙佳乐), Yuming Zhang(张玉明), Hongliang Lu(吕红亮), Zhijun Lyu(吕智军),Yi Zhu(朱翊), Yuche Pan(潘禹澈), and Bin Lu(芦宾) High on-state current p-type tunnel effect transistor based on doping modulation 2023 Chin. Phys. B 32 078504

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