INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
High on-state current p-type tunnel effect transistor based on doping modulation |
Jiale Sun(孙佳乐)1, Yuming Zhang(张玉明)1, Hongliang Lu(吕红亮)1,†, Zhijun Lyu(吕智军)2, Yi Zhu(朱翊)1, Yuche Pan(潘禹澈)1, and Bin Lu(芦宾)3 |
1 School of Microelectronics, Xidian University, The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xi'an 710071, China; 2 Department of Integrated Circuit Design, Institute of Microelectronics Technology, Xi'an 710071, China; 3 School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030031, China |
|
|
Abstract To solve the problem of the low on-state current in p-type tunnel field-effect transistors (p-TFETs), this paper analyzes the mechanism of adjusting the tunneling current of a TFET device determined by studying the influence of the peak position of ion implantation on the potential of the p-TFET device surface and the width of the tunneling barrier. Doping-regulated silicon-based high on-state p-TFET devices are designed and fabricated, and the test results show that the on-state current of the fabricated devices can be increased by about two orders of magnitude compared with the current of other devices with the same structure. This method provides a new idea for the realization of high on-state current TFET devices.
|
Received: 08 July 2022
Revised: 22 September 2022
Accepted manuscript online: 21 October 2022
|
PACS:
|
85.30.Mn
|
(Junction breakdown and tunneling devices (including resonance tunneling devices))
|
|
85.40.Ry
|
(Impurity doping, diffusion and ion implantation technology)
|
|
73.40.Gk
|
(Tunneling)
|
|
Fund: Project supported by the Key Research and Development Program of Shaanxi (Grant No. 2021GY-010) and the National Defense Science and Technology Foundation Strengthening Program of China (Grant No. 2019-XXXX-XX-236-00). |
Corresponding Authors:
Hongliang Lu
E-mail: hllv@mail.xidian.edu.cn
|
Cite this article:
Jiale Sun(孙佳乐), Yuming Zhang(张玉明), Hongliang Lu(吕红亮), Zhijun Lyu(吕智军),Yi Zhu(朱翊), Yuche Pan(潘禹澈), and Bin Lu(芦宾) High on-state current p-type tunnel effect transistor based on doping modulation 2023 Chin. Phys. B 32 078504
|
[1] Wang Q, Sang P, Ma X, Wang F and Chen J 2020 IEEE International Electron Devices Meeting (IEDM) San Francisco, December 10–18, 2020, CA, USA, p. 1 [2] Park Y H, Yi B, Kim S H, Shim J H and Yang J W 2021 IEEE Trans. Electron Device 68 4051 [3] Goyal P, Srivastava G, Rewari S and Gupta R S 2020 5th IEEE International Conference on Recent Advances and Innovations in Engineering (ICRAIE), December 1–3, 2020, Jaipur, India, p. 1 [4] Choi W Y, Park B, Lee J D and Liu T K 2007 IEEE Electron Device Lett. 28 743 [5] Sung H K, Kam H, Hu C and Liu T K 2009 Symposium on VLSI Technology, June 15–17, 2009, Kyoto, Japan, p. 178 [6] Takagi S, Kim M, Noguchi M, Nishi K and Takenaka M 2015 Fourth Berkeley Symposium on Energy Efficient Electronic Systems (E3S), October 1–2, 2015, Berkeley, USA, p. 1 [7] Huang Q, Huang R, Zhan Z, Qiu Y, Jiang W, Wu C and Wang Y 2012 International Electron Devices Meeting (IEDM), December 10– 13, 2012, San Francisco, USA, p. 8.5.1 [8] Huang Q, Huang R, Wu C L, Zhu H, Chen C, Wang J X, Guo L Y, Wang R S, Ye L and Wang Y Y 2014 International Electron Devices Meeting (IEDM), December 15–17, 2014, San Francisco, CA, USA, p. 13.3.1 [9] SZE S Z (translated by Wu G Y, Geng L and Zhang R Z) 2008 Physics Of Semiconductor Devices (Xi’an: Xi’an Jiaotong University Press) p. 321 (in Chinese) [10] Mayer F, Royer C L, Damlencourt J, Romanjek K, Andrieu F, Tabone C, Previtali B, Deleonibus S 2008 International Electron Devices Meeting (IEDM), December 15–17, 2008, San Francisco, CA, USA, p. 1 [11] Jeon K, Loh W Y, Patel P, Kang C Y, Oh J, Bowonder A, Park C, Park C S, Smith C, Majhi P, Tseng H H, Jammy P, Liu T J K and Hu K 2010 Symposium on VLSI Technology, June 15–17, 2010 Honolulu, HI, USA, p. 121 [12] Richter S, Sandow C, Nichau A, Trellenkamp S, Schmidt M, Luptak R, Bourdelle K K, Zhao Q T and Mantl S 2012 IEEE Electron Device Lett. 33 1535 [13] Zhao Y, Wu C, Huang Q, Chen C, Zhu J, Guo L, Jia R, Lv Z, Yang Y, Li M, Huang R 2017 IEEE Electron Device Lett. 38 540 [14] Mohata D K, Bijesh R, Zhu Y, Hudait M K, Southwick R, Chbili Z, Gundlach D, Suehle J, Fastenau J M, Loubychev D, Liu A K, Mayer T S, Narayanan V and Datta S 2012 Symposium on VLSI Technology (VLSIT), June 12–14, 2012, Honolulu, HI, USA, p. 53 [15] Riel H, Moselund K, Bessire C, Bjork M, Schenk A, Ghoneim H, Schmid H 2012 International Electron Devices Meeting (IEDM), December 10–13, 2012, San Francisco, CA, USA, p. 16.6.1 [16] Huang Q Q, Jia R, Chen C, Zhu H, Guo L, Wang J, Wang J, Wu C, Wang R, Bu W, Kang J, Wang W, Wu H, Lee S, Wang Y and Huang R 2015 International Electron Devices Meeting (IEDM), December 7–9, 2015, San Francisco, CA, USA, p. 22.2.1 [17] Liu E K, Zhu B S, Luo J S 2011 The Physics Of Semiconductor (7th edition) (Beijing: Publishing House of Electronics Industry) p. 184 (in Chinese) [18] Guan X D 2011 Silicon Integrated Circuit Process Fundamentals (Beijing: Peking University Press) p. 97 (in Chinese) [19] Lyu Z J, Lu H L, Zhang Y M, Zhang Y M, Lu B, Cui X R and Zhao Y X 2018 IEEE Trans. Electron Device 65 4988 [20] Huang Q Q, Huang R, Zhan Z, Wu C, Qiu Y and Wang Y 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, October 29–Novermber 1, 2012 Xi’an, p. 1 [21] Mookerjea S, Mohata D, Mayer T, Narayanan V and Datta S and 2010 IEEE Electron Device Lett. 31 564 |
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|