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NiO/β-Ga2O3 heterojunction diodes with ultra-low leakage current below 10-10 A and high thermostability |
| Yi Huang(黄义)1, Wen Yang(杨稳)1, Qi Wang(王琦)1,†, Sheng Gao(高升)1, Wei-Zhong Chen(陈伟中)1, Xiao-Sheng Tang(唐孝生)1, Hong-Sheng Zhang(张红升)1, and Bin Liu(刘斌)2 |
1 School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China;
2 School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China |
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Abstract The 10 nm p-NiO thin film is prepared by thermal oxidation of Ni on β-Ga2O3 to form NiO/β-Ga2O3 p-n heterojunction diodes (HJDs). The NiO/β-Ga2O3 HJDs exhibit excellent electrostatic properties, with a high breakdown voltage of 465 V, a specific on-resistance (Ron,sp) of 3.39 mΩ ·cm2, and a turn-on voltage (Von) of 1.85 V, yielding a static Baliga's figure of merit (FOM) of 256 MW/cm2. Also, the HJDs have a low turn-on voltage, which reduces conduction loss dramatically, and a rectification ratio of up to 108. Meanwhile, the HJDs' reverse leakage current is essentially unaffected at temperatures below 170 ℃, and their leakage level may be controlled below 10-10 A. This indicates that p-NiO/β-Ga2O3 HJDs with good thermal stability and high-temperature operating ability can be a good option for high-performance β-Ga2O3 power devices.
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Received: 15 October 2022
Revised: 16 November 2022
Accepted manuscript online: 22 November 2022
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PACS:
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85.30.Kk
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(Junction diodes)
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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81.05.Hd
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(Other semiconductors)
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| Fund: Project supported by the Technology Innovation and Application Demonstration Key Project of Chongqing Municipality (cstc2019jszx-zdztzxX0005), the Technology Innovation and Application Demonstration Key Project of Chongqing Municipality (cstc2020jscx-gksbX0011), the Science and Technology Research Program of Chongqing Municipal Education Commission (KJQN202100614), and the Natural Science Foundation of Chongqing (cstc2021jcyj-bshX0146). |
Corresponding Authors:
Qi Wang
E-mail: wangqi@cqupt.edu.cn
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Cite this article:
Yi Huang(黄义), Wen Yang(杨稳), Qi Wang(王琦), Sheng Gao(高升), Wei-Zhong Chen(陈伟中), Xiao-Sheng Tang(唐孝生), Hong-Sheng Zhang(张红升), and Bin Liu(刘斌) NiO/β-Ga2O3 heterojunction diodes with ultra-low leakage current below 10-10 A and high thermostability 2023 Chin. Phys. B 32 098502
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