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Dislocation slip behaviors in high-quality bulk GaN investigated by nanoindentation |
Kai-Heng Shao(邵凯恒)1,2, Yu-Min Zhang(张育民)2,3, Jian-Feng Wang(王建峰)1,2,3,†, and Ke Xu(徐科)1,2,3,‡ |
1 School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China; 2 Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences(CAS), Suzhou 215123, China; 3 Suzhou Nanowin Science and Technology Co., Ltd, Suzhou 215123, China |
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Abstract The dislocation slip behaviors in GaN bulk crystal are investigated by nanoindentation, the dislocation distribution patterns formed around an impress are observed by cathodoluminescence (CL) and cross-sectional transmission electron microscope (TEM). Dislocation loops, vacancy luminescence, and cross-slips show hexagonal symmetry around the <11-20> and <1-100> direction on c-plane. It is found that the slip planes of dislocation in GaN crystal are dominated in {0001} basal plane and {10-11} pyramid plane. According to the dislocation intersection theory, we come up with the dislocation formation process and the related mechanisms are discussed.
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Received: 23 February 2021
Revised: 20 April 2021
Accepted manuscript online: 01 May 2021
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PACS:
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61.72.uj
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(III-V and II-VI semiconductors)
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61.72.Ff
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(Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))
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61.72.Lk
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(Linear defects: dislocations, disclinations)
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Corresponding Authors:
Jian-Feng Wang, Ke Xu
E-mail: jfwang2006@sinano.ac.cn;kxu2006@sinano.ac.cn
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Cite this article:
Kai-Heng Shao(邵凯恒), Yu-Min Zhang(张育民), Jian-Feng Wang(王建峰), and Ke Xu(徐科) Dislocation slip behaviors in high-quality bulk GaN investigated by nanoindentation 2021 Chin. Phys. B 30 116104
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