| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Separating spins by dwell time of electrons across parallel double δ-magnetic-barrier nanostructure applied by bias |
| Sai-Yan Chen(陈赛艳)†, Mao-Wang Lu(卢卯旺), and Xue-Li Cao(曹雪丽) |
| College of Science, Guilin University of Technology, Guilin 541004, China |
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Abstract The dwell time and spin polarization (SP) of electrons tunneling through a parallel double δ-magnetic-barrier nanostructure in the presence of a bias voltage is studied theoretically in this work. This nanostructure can be constructed by patterning two asymmetric ferromagnetic stripes on the top and bottom of InAs/AlxIn1-xAs heterostructure, respectively. An evident SP effect remains after a bias voltage is applied to the nanostructure. Moreover, both magnitude and sign of spin-polarized dwell time can be manipulated by properly changing the bias voltage, which may result in an electrically-tunable temporal spin splitter for spintronics device applications.
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Received: 17 January 2021
Revised: 18 February 2021
Accepted manuscript online: 02 March 2021
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PACS:
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72.25.Dc
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(Spin polarized transport in semiconductors)
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72.25.-b
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(Spin polarized transport)
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72.25.Hg
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(Electrical injection of spin polarized carriers)
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85.75.-d
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(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11864009). |
Corresponding Authors:
Sai-Yan Chen
E-mail: 6615049@glut.edu.cn
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Cite this article:
Sai-Yan Chen(陈赛艳), Mao-Wang Lu(卢卯旺), and Xue-Li Cao(曹雪丽) Separating spins by dwell time of electrons across parallel double δ-magnetic-barrier nanostructure applied by bias 2022 Chin. Phys. B 31 017201
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