Mechanism of titanium-nitride chemical mechanical polishing

doi:10.1088/1674-1056/abc161

Abstract During the preparation of the phase change memory, the deposition and chemical mechanical polishing (CMP) of titanium nitride (TiN) are indispensable. A new acidic slurry added with sodium hypochlorite (NaClO) as an oxidizer is developed for the CMP of TiN film. It has achieved a material removal rate of 76 nm/min, a high selectivity between TiN film and silica (SiO₂) films of 128:1, a selectivity between TiN film and tungsten film of 84:1 and a high surface quality. To understand the mechanism of TiN CMP process, x-ray photoelectron (XPS) spectroscope and potentiodynamic polarization measurement are performed. It is found that the mechanism of TiN CMP process is cyclic reaction polishing mechanism. In addition, both static corrosion rate and the inductively coupled plasma results indicate TiN would not be dissolved, which means that the mechanical removal process of oxide layer plays a decisive role in the material removal rate. Finally, the mechanism of TiN polishing process is given based on the analysis of surface potential and the description of blocking function.

Keywords: TiN chemical mechanical polishing mechanism

Received: 20 August 2020
Revised: 11 September 2020
Accepted manuscript online: 15 October 2020

PACS:

83.50.Jf

(Extensional flow and combined shear and extension)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61874178 and 61874129) and the National Key Research and Development Program of China (Grant Nos. 2018YFB0407500 and 2017YFA0206101).

Corresponding Authors: ^†Corresponding author. E-mail: rabbitlwl@mail.sim.ac.cn

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Dao-Huan Feng(冯道欢), Ruo-Bing Wang(王若冰), Ao-Xue Xu(徐傲雪), Fan Xu(徐帆), Wei-Lei Wang(汪为磊), Wei-Li Liu(刘卫丽), and Zhi-Tang Song(宋志棠) Mechanism of titanium-nitride chemical mechanical polishing 2021 Chin. Phys. B 30 028301

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