Light trapping and optical absorption enhancement in vertical semiconductor Si/SiO2 nanowire arrays

doi:10.1088/1674-1056/27/2/026102

Abstract The full potential of optical absorption property must be further cultivated before silicon (Si) semiconductor nanowire (NW) arrays become available for mainstream applications in optoelectronic devices. In this paper, we demonstrate both experimentally and theoretically that an SiO₂ coating can substantially improve the absorption of light in Si NW arrays. When the transparent SiO₂ shell is coated on the outer layer of Si NW, the incident light penetrates better into the absorbing NW core. We provide the detailed theoretical analysis by a combination of finite-difference time-domain (FDTD) analysis. It is demonstrated that increasing the thickness of the dielectric shell, we achieve 1.72 times stronger absorption in the NWs than in uncoated NWs.

Keywords: nanowire nanosphere lithography finite-difference time-domain (FDTD)

Received: 14 September 2017
Revised: 04 November 2017
Accepted manuscript online:

PACS:	61.46.Km	(Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))
	71.35.Cc	(Intrinsic properties of excitons; optical absorption spectra)
	61.46.-w	(Structure of nanoscale materials)

Fund: Project supported by the Science and Technology Project of Zhejiang Province, China (Grant No. 2017C31120).

Corresponding Authors: Xin-Hua Li
E-mail: xinhuali@issp.ac.cn

About author: 61.46.Km; 71.35.Cc; 61.46.-w

Cite this article:

Ying Wang(王莹), Xin-Hua Li(李新化) Light trapping and optical absorption enhancement in vertical semiconductor Si/SiO₂ nanowire arrays 2018 Chin. Phys. B 27 026102

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Light trapping and optical absorption enhancement in vertical semiconductor Si/SiO2 nanowire arrays

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Light trapping and optical absorption enhancement in vertical semiconductor Si/SiO₂ nanowire arrays