Optical and defect properties of S-doped and Al-doped GaSe crystals

doi:10.1088/1674-1056/26/9/094211

Abstract S-doped and Al-doped GaSe crystals are promising materials for their applications in nonlinear frequency conversion devices. The optical and defect properties of pure, S-doped, and Al-doped GaSe crystals were studied by using photoluminescence (PL) and Fourier transform infrared spectroscopy (FT-IR). The micro-topography of (0001) face of these samples was observed by using scanning electron microscope (SEM) to investigate the influence of the doped defects on the intralayer and interlayer chemical bondings. The doped S or Al atoms form the S_Se⁰ or Al_Ga⁺¹ substitutional defects in the layer GaSe structure, and the positive center of Al_Ga⁺¹ could induce defect complexes. The incorporations of S and Al atoms can change the optical and mechanical properties of the GaSe crystal by influencing the chemical bonding of the layer structure. The study results may provide guidance for the crystal growth and further applications of S-doped and Al-doped GaSe crystals.

Keywords: doped GaSe crystals defect optical properties mechanical properties

Received: 06 December 2016
Revised: 06 April 2017
Accepted manuscript online:

PACS:	42.70.Nq	(Other nonlinear optical materials; photorefractive and semiconductor materials)
	78.40.Fy	(Semiconductors)
	78.55.Hx	(Other solid inorganic materials)
	81.10.Fq	(Growth from melts; zone melting and refining)

Fund: Project supported by Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. CXJJ-16M128).

Corresponding Authors: Hai-Xin Wu
E-mail: hxwu@aiofm.ac.cn

Cite this article:

Chang-Bao Huang(黄昌保), Hai-Xin Wu(吴海信), You-Bao Ni(倪友保), Zhen-You Wang(王振友), Shi-Jing Chen(陈诗静) Optical and defect properties of S-doped and Al-doped GaSe crystals 2017 Chin. Phys. B 26 094211

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Optical and defect properties of S-doped and Al-doped GaSe crystals

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