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Chin. Phys. B, 2022, Vol. 31(4): 047102    DOI: 10.1088/1674-1056/ac3a62

Tunable electronic properties of GaS-SnS2 heterostructure by strain and electric field

Da-Hua Ren(任达华)1,2,†, Qiang Li(李强)3, Kai Qian(钱楷)3, and Xing-Yi Tan(谭兴毅)4
1 School of Information Engineering, Hubei Minzu University, Enshi 44500, China;
2 Science of Physics and Technology, Wuhan University, Wuhan 430072, China;
3 School of Advanced Materials and Mechatronic Engineering, Hubei Minzu University, Enshi 44500, China;
4 Department of Physics, Chongqing Three Gorges University, Wanzhou 404100, China
Abstract  Vertically stacked heterostructures have received extensive attention because of their tunable electronic structures and outstanding optical properties. In this work, we study the structural, electronic, and optical properties of vertically stacked GaS-SnS2 heterostructure under the frame of density functional theory. We find that the stacked GaS-SnS2 heterostructure is a semiconductor with a suitable indirect band gap of 1.82 eV, exhibiting a type-II band alignment for easily separating the photo-generated carriers. The electronic properties of GaS-SnS2 heterostructure can be effectively tuned by an external strain and electric field. The optical absorption of GaS-SnS2 heterostructure is more enhanced than those of the GaS monolayer and SnS2 monolayer in the visible light region. Our results suggest that the GaS-SnS2 heterostructure is a promising candidate for the photocatalyst and photoelectronic devices in the visible light region.
Keywords:  GaS-SnS2 heterostructure      type-II band alignment      optical properties      density functional theory  
Received:  09 July 2021      Revised:  30 September 2021      Accepted manuscript online:  17 November 2021
PACS:  71.15.Mb (Density functional theory, local density approximation, gradient and other corrections)  
  74.78.Fk (Multilayers, superlattices, heterostructures)  
  78.67.-n (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 1186040026), the Incubation Project for High-Level Scientific Research Achievements of Hubei Minzu University, China (Grant No. 4205009), and the Fund of the Educational Commission of Hubei Province, China (Grant No. T201914).
Corresponding Authors:  Da-Hua Ren     E-mail:

Cite this article: 

Da-Hua Ren(任达华), Qiang Li(李强), Kai Qian(钱楷), and Xing-Yi Tan(谭兴毅) Tunable electronic properties of GaS-SnS2 heterostructure by strain and electric field 2022 Chin. Phys. B 31 047102

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