Nonlinear optical properties in n-type quadruple δ-doped GaAs quantum wells
Humberto Noverola-Gamas1,†, Luis Manuel Gaggero-Sager2, and Outmane Oubram3
1 División Académica de Ingeniería y Arquitectura, Universidad Juárez Autónoma de Tabasco, Carretera Cunduacán-Jalpa de Méndez Km. 1 Col. La Esmeralda, Cunduacán, 8660, Mexico; 2 Centro de Investigación en Ingeniería y Ciencias Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001 Col. Chamilpa, Cuernavaca, 62209, México; 3 Facultad de Ciencias Químicas e Ingeniería, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001 Col. Chamilpa, Cuernavaca, 62209, México
Abstract The effects of the interlayer distance on the nonlinear optical properties of n-type quadruple δ-doped GaAs quantum well were theoretically investigated. Particularly, the absorption coefficient and the relative refraction index change were determined. In the effective mass approach and within the framework of the Thomas-Fermi theory, the Schrödinger equation was resolved. Thereby, the subband energy levels and their respective wave functions were calculated. The variations in the nonlinear optical properties were determined by using the density matrix solutions. The achieved results demonstrate that the interlayer distance causes optical red-shift on nonlinear optical properties. Therefore, it can be deduced that the suitably chosen interlayer distance can be used to tune optical properties within the infrared spectrum region in optoelectronic devices such as far-infrared photo-detectors, high-speed electronic-optical modulators, and infrared lasers.
Humberto Noverola-Gamas, Luis Manuel Gaggero-Sager, and Outmane Oubram Nonlinear optical properties in n-type quadruple δ-doped GaAs quantum wells 2022 Chin. Phys. B 31 044203
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