Improvement in electrical properties of high-κfilm on Ge substrate by an improved stress relieved pre-oxide method

doi:10.1088/1674-1056/25/2/027702

Abstract High-κ/Ge gate stack has recently attracted a great deal of attention as a potential candidate to replace planar silicon transistors for sub-22 generation. However, the desorption and volatilization of GeO hamper the development of Ge-based devices. To cope with this challenge, various techniques have been proposed to improve the high-κ/Ge interface. However, these techniques have not been developed perfectly yet to control the interface. Therefore, in this paper, we propose an improved stress relieved pre-oxide (SRPO) method to improve the thermodynamic stability of the high-κ/Ge interface. The x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) results indicate that the GeO volatilization of the high-κ/Ge gate stack is efficiently suppressed after 500 ℃ annealing, and the electrical characteristics are greatly improved.

Keywords: high-κfilm GeO volatilization stress relieved pre-oxide annealing

Received: 11 July 2015
Revised: 28 September 2015
Accepted manuscript online:

PACS:	77.55.D-
	82.80.Pv	(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))

Corresponding Authors: Ji-Bin Fan
E-mail: jbfan@chd.edu.cn

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Ji-Bin Fan(樊继斌), Xiao-Fu Ding(丁晓甫), Hong-Xia Liu(刘红侠), Peng-Fei Xie(谢鹏飞), Yuan-Tao Zhang(张袁涛), Qing-Liang Liao(廖清良) Improvement in electrical properties of high-κfilm on Ge substrate by an improved stress relieved pre-oxide method 2016 Chin. Phys. B 25 027702

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Improvement in electrical properties of high-κfilm on Ge substrate by an improved stress relieved pre-oxide method

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