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Chin. Phys. B, 2021, Vol. 30(3): 034210    DOI: 10.1088/1674-1056/abd757
ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS Prev   Next  

Design and fabrication of GeAsSeS chalcogenide waveguides with thermal annealing

Limeng Zhang(张李萌)1, Jinbo Chen(陈锦波)1, Jierong Gu(顾杰荣)2, Yixiao Gao(高一骁)1, Xiang Shen(沈祥)1,†, Yimin Chen(陈益敏)3,‡, and Tiefeng Xu(徐铁峰)1,2
1 Laboratory of Infrared Materials and Devices & Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Research Institute of Advanced Technology, Ningbo University, Ningbo 315211, China; 2 Ningbo Institute of Oceanography, Ningbo 315832, China; 3 Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
Abstract  We reported a chalcogenide glass-based rib waveguide fabricated using photolithography and dry etching method. A commercial software (COMSOL Multiphysics) was used to optimize the waveguide structure and the distribution of the fundamental modes in the waveguide based on the complete vector finite component. We further employed thermal annealing to optimize the surface and sidewalls of the rib waveguides. It was found that the optimal annealing temperature for GeAsSeS films is 220 °C, and the roughness of the films could be significantly reduced by annealing. The zero-dispersion wavelength (ZDW) could be shifted to a short wavelength around ∼ 2.1 μ m via waveguide structural optimization, which promotes supercontinuum generation with a short wavelength pump laser source. The insertion loss of the waveguides with cross-sectional areas of 4.0 μ m× 3.5 μ m and 6.0 μ m× 3.5 μ m was measured using lens fiber and the cut-back method. The propagation loss of the 220 °C annealed waveguides could be as low as 1.9 dB/cm at 1550 nm.
Keywords:  chalcogenide film      dispersion engineering      optical waveguide      thermal annealing  
Received:  15 October 2020      Revised:  22 December 2020      Accepted manuscript online:  30 December 2020
PACS:  42.82.-m (Integrated optics)  
  42.82.Cr (Fabrication techniques; lithography, pattern transfer)  
  42.82.Et (Waveguides, couplers, and arrays)  
  42.81.Dp (Propagation, scattering, and losses; solitons)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61904091 and 61775111), Zhejiang Provincial Natural Science Foundation of China (Grant No. LR18E010002), the Natural Science Foundation of Ningbo City, China (Grant No. 2019A610065), the International Cooperation Project of Ningbo City, China (Grant No. 2017D10009), and K. C. Wong Magna Fund in Ningbo University, China.
Corresponding Authors:  Corresponding author. E-mail: shenxiang@nbu.edu.cn Corresponding author. E-mail: chenyimin@nbu.edu.cn   

Cite this article: 

Limeng Zhang(张李萌), Jinbo Chen(陈锦波), Jierong Gu(顾杰荣), Yixiao Gao(高一骁), Xiang Shen(沈祥), Yimin Chen(陈益敏), and Tiefeng Xu(徐铁峰) Design and fabrication of GeAsSeS chalcogenide waveguides with thermal annealing 2021 Chin. Phys. B 30 034210

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