Current induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin-orbit coupling

doi:10.1088/1674-1056/25/2/027201

Abstract We have studied the characteristics of current induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin-orbit coupling. It was found that within some parameter regions the magnitude of the current induced nonequilibrium spin polarization density in such structures will increase (or decrease) with the decrease (or increase) of the charge current density, in contrast to that found in normal spin-orbit coupled semiconductor structures. It was also found that the unusual characteristics of the current induced nonequilibrium spin polarization in such structures can be well explained by the effect of the Andreev reflection.

Keywords: semiconductor/superconductor junctions spin-orbit coupling Andreev reflection current induced spin polarization

Received: 29 July 2015
Revised: 11 October 2015
Accepted manuscript online:

PACS:	72.10.-d	(Theory of electronic transport; scattering mechanisms)
	72.20.-i	(Conductivity phenomena in semiconductors and insulators)
	73.50.Jt	(Galvanomagnetic and other magnetotransport effects)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11474106).

Corresponding Authors: Liang-Bin Hu
E-mail: lbhu26@yahoo.com

Cite this article:

Nai-Qing Liu(刘乃清), Li-Jie Huang(黄立捷), Rui-Qiang Wang(王瑞强), Liang-Bin Hu(胡梁宾) Current induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin-orbit coupling 2016 Chin. Phys. B 25 027201

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Current induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin-orbit coupling

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