CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction |
Luan Gui-Ping (栾桂苹)a, Zhang Pei-Ran (张沛然)a, Jiao Na (焦娜)a, Sun Li-Zhong (孙立忠)b |
a Department of Physics, Xiangtan University, Xiangtan 411105, China; b Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Scienceand Engineering, Xiangtan University, Xiangtan 411105, China |
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Abstract Using the density functional theory and the nonequilibrium Green’s function method, we studied the finite-bias quantum transport in a Cr/graphene/Cr magnetotunnel junction (MTJ) constructed by a single graphene layer sandwiched between two semi-infinite Cr(111) electrodes. We found that the tunneling magnetoresistance (TMR) ratio in this MTJ reached 108%, which is close to that of a perfect spin filter. Under an external positive bias, we found that the TMR ratio remained constant at 65%, in contrast to MgO-based MTJs, the TMR ratios of which decrease with increasing bias. These results indicate that the Cr/graphene/Cr MTJ is a promising candidate for spintronics applications.
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Received: 16 January 2015
Revised: 27 April 2015
Accepted manuscript online:
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PACS:
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72.15.Gd
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(Galvanomagnetic and other magnetotransport effects)
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72.25.Mk
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(Spin transport through interfaces)
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Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10874143, 10974166, and 11574260), the Program for New Century Excellent Talents in University, China (Grant No. NCET-10-0169), the National Innovation Foundation for Graduate, China (Grant No. 201310530003), and the Computational Support from Shanghai Super-computer Center, China. |
Corresponding Authors:
Sun Li-Zhong
E-mail: lzsun@xtu.edu.cn
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Cite this article:
Luan Gui-Ping (栾桂苹), Zhang Pei-Ran (张沛然), Jiao Na (焦娜), Sun Li-Zhong (孙立忠) Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction 2015 Chin. Phys. B 24 117201
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