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Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures |
| Wenyu Huang(黄文宇)1, Cangmin Wang(王藏敏)1, Yichao Liu(刘艺超)1, Shaoting Wang(王绍庭)2, Weifeng Ge(葛威锋)1, Huaili Qiu(仇怀利)1, Yuanjun Yang(杨远俊)1,†, Ting Zhang(张霆)1,‡, Hui Zhang(张汇)3, and Chen Gao(高琛)4 |
1 School of Physics, Hefei University of Technology, Hefei 230009, China;
2 School of Microelectronics, Hefei University of Technology, Hefei 230009, China;
3 Hefei National Laboratory for Physical Sciences at Microscale(HFNL), University of Science and Technology of China, Hefei 230026, China;
4 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China |
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Abstract Because of the wide selectivity of ferromagnetic and ferroelectric (FE) components, electric-field (E-field) control of magnetism via strain mediation can be easily realized through composite multiferroic heterostructures. Here, an MgO-based magnetic tunnel junction (MTJ) is chosen rationally as the ferromagnetic constitution and a high-activity (001)-Pb(Mg$_{1/3}$Nb$_{2/3}$)$_{0.7}$Ti$_{0.3}$O$_{3}$ (PMN-0.3PT) single crystal is selected as the FE component to create a multiferroic MTJ/FE hybrid structure. The shape of tunneling magnetoresistance (TMR) versus in situ E-fields imprints the butterfly loop of the piezo-strain of the FE without magnetic-field bias. The E-field-controlled change in the TMR ratio is up to $-$0.27% without magnetic-field bias. Moreover, when a typical magnetic field ($\sim \pm 10$ Oe) is applied along the minor axis of the MTJ, the butterfly loop is changed significantly by the E-fields relative to that without magnetic-field bias. This suggests that the E-field-controlled junction resistance is spin-dependent and correlated with magnetization switching in the free layer of the MTJ. In addition, based on such a multiferroic heterostructure, a strain-gauge factor up to approximately 40 is achieved, which decreases further with a sign change from positive to negative with increasing magnetic fields. This multiferroic hybrid structure is a promising avenue to control TMR through E-fields in low-power-consumption spintronic and straintronic devices at room temperature.
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Received: 16 November 2021
Revised: 11 January 2022
Accepted manuscript online: 07 February 2022
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PACS:
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75.85.+t
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(Magnetoelectric effects, multiferroics)
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77.55.Nv
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(Multiferroic/magnetoelectric films)
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85.75.-d
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(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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75.47.-m
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(Magnetotransport phenomena; materials for magnetotransport)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 52072102 and 11775224). It was also partially funded through the Open Foundation of the Hefei National Laboratory for Physical Sciences at the Microscale (Grant No. KF2020002). The authors greatly appreciate the beamlines BL07W, BL11U and BL12B-α at the National Synchrotron Radiation Laboratory (Grant No. NSRL) for multiferroic device fabrication and characterization. In particular, the authors would like to sincerely thank Xiao's group for providing MTJ samples. |
Corresponding Authors:
Yuanjun Yang, Ting Zhang
E-mail: yangyuanjun@hfut.edu.cn;zhangting@hfut.edu.cn
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Cite this article:
Wenyu Huang(黄文宇), Cangmin Wang(王藏敏), Yichao Liu(刘艺超), Shaoting Wang(王绍庭), Weifeng Ge(葛威锋), Huaili Qiu(仇怀利), Yuanjun Yang(杨远俊), Ting Zhang(张霆), Hui Zhang(张汇), and Chen Gao(高琛) Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures 2022 Chin. Phys. B 31 097502
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