A novel LDMOS with a junction field plate and a partial N-buried layer

doi:10.1088/1674-1056/23/12/127303

Abstract

A novel lateral double-diffused metal–oxide semiconductor (LDMOS) with a high breakdown voltage (BV) and low specific on-resistance (R_on.sp) is proposed and investigated by simulation. It features a junction field plate (JFP) over the drift region and a partial N-buried layer (PNB) in the P-substrate. The JFP not only smoothes the surface electric field (E-field), but also brings in charge compensation between the JFP and the N-drift region, which increases the doping concentration of the N-drift region. The PNB reshapes the equipotential contours, and thus reduces the E-field peak on the drain side and increases that on the source side. Moreover, the PNB extends the depletion width in the substrate by introducing an additional vertical diode, resulting in a significant improvement on the vertical BV. Compared with the conventional LDMOS with the same dimensional parameters, the novel LDMOS has an increase in BV value by 67.4%, and a reduction in R_on.sp by 45.7% simultaneously.

Keywords: junction field plate partial N-buried layer specific on-resistance breakdown voltage

Received: 30 June 2014
Revised: 07 August 2014
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 61376079), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-0062), and the Postdoctoral Science Foundation of China (Grant Nos. 2012T50771 and XM2012004).

Corresponding Authors: Luo Xiao-Rong
E-mail: xrluo@uestc.edu.cn

Cite this article:

Shi Xian-Long (石先龙), Luo Xiao-Rong (罗小蓉), Wei Jie (魏杰), Tan Qiao (谭桥), Liu Jian-Ping (刘建平), Xu Qing (徐青), Li Peng-Cheng (李鹏程), Tian Rui-Chao (田瑞超), Ma Da (马达) A novel LDMOS with a junction field plate and a partial N-buried layer 2014 Chin. Phys. B 23 127303


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A novel LDMOS with a junction field plate and a partial N-buried layer

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