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A novel LDMOS with a junction field plate and a partial N-buried layer |
Shi Xian-Long (石先龙)a, Luo Xiao-Rong (罗小蓉)a b, Wei Jie (魏杰)a, Tan Qiao (谭桥)a, Liu Jian-Ping (刘建平)a, Xu Qing (徐青)a, Li Peng-Cheng (李鹏程)a, Tian Rui-Chao (田瑞超)a, Ma Da (马达)a |
a State Key Laboratory of Electronic Thin Films and Integrated Devices. University of Electronic Science and Technology of China, Chengdu 610054, China;
b Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China |
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Abstract A novel lateral double-diffused metal–oxide semiconductor (LDMOS) with a high breakdown voltage (BV) and low specific on-resistance (Ron.sp) is proposed and investigated by simulation. It features a junction field plate (JFP) over the drift region and a partial N-buried layer (PNB) in the P-substrate. The JFP not only smoothes the surface electric field (E-field), but also brings in charge compensation between the JFP and the N-drift region, which increases the doping concentration of the N-drift region. The PNB reshapes the equipotential contours, and thus reduces the E-field peak on the drain side and increases that on the source side. Moreover, the PNB extends the depletion width in the substrate by introducing an additional vertical diode, resulting in a significant improvement on the vertical BV. Compared with the conventional LDMOS with the same dimensional parameters, the novel LDMOS has an increase in BV value by 67.4%, and a reduction in Ron.sp by 45.7% simultaneously.
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Received: 30 June 2014
Revised: 07 August 2014
Accepted manuscript online:
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PACS:
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61376079), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-0062), and the Postdoctoral Science Foundation of China (Grant Nos. 2012T50771 and XM2012004). |
Corresponding Authors:
Luo Xiao-Rong
E-mail: xrluo@uestc.edu.cn
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Cite this article:
Shi Xian-Long (石先龙), Luo Xiao-Rong (罗小蓉), Wei Jie (魏杰), Tan Qiao (谭桥), Liu Jian-Ping (刘建平), Xu Qing (徐青), Li Peng-Cheng (李鹏程), Tian Rui-Chao (田瑞超), Ma Da (马达) A novel LDMOS with a junction field plate and a partial N-buried layer 2014 Chin. Phys. B 23 127303
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| [1] | Ludikhuize A W 2001 IEEE Solid-State Device Research Conference, September 11-13, 2001, Proceeding of the 31st European, p. 35
|
|
| [2] | Iqbal M M, Udrea F and Napoli E 2009 IEEE Proceedings of the 21st International Symposium on Power Semiconductor Devices and ICs, June 14-18, 2009, Barcelona, Spain, p. 247
|
|
| [3] | Lee M R and Kwon O K 1999 IEEE Proceedings of the 11th International Symposium on Power Semiconductor Devices and ICs, May 26-28, 1999, Toronto, Canada, p. 249
|
|
| [4] | Xie G, Xu E, Hashemi N, Zhang B, Fu F Y and Wai T N 2012 Chin. Phys. B 21 086105
|
|
| [5] | Yahata A and Atsuta M 1995 IEEE Proceedings of the 7th International Symposium on Power Semiconductor Devices and ICs, May 23-25, 1995, Yokohama, Japan, p. 400
|
|
| [6] | Ludikhuize A W 2000 IEEE Proceedings of the 12th International Symposium on Power Semiconductor Devices and ICs, May 22-25, 2000, Toulouse, France, p. 11
|
|
| [7] | Luo X R, Yao G L, Zhang Z Y, Jiang Y H, Zhou K, Wang P, Wang Y G, Lei T F, Zhang Y X and Wei J 2012 Chin. Phys. B 21 068501
|
|
| [8] | Luo X R, Luo Y C, Fan Y, Hu G Y, Wang X W, Zhang Z Y, Fan Y H, Cai J Y, Wang P and Zhou K 2013 Chin. Phys. B 22 027304
|
|
| [9] | Luo, X, Zhang B and Li Z 2007 Solid-State Electronics 51 493
|
|
| [10] | Duan B X, Zhang B and Li Z J 2006 IEEE International Conference on Communications, Circuits and Systems Proceedings, June 25-28, 2006, Guilin, China, Vol. 4, p. 2709
|
|
| [11] | Zhang B, Duan B X and Li Z J 2006 J. Semicond. 27 4
|
|
| [12] | Cheng J B, Zhang B and Li Z J 2008 IEEE Electron Dev. Lett. 29 645
|
|
| [13] | Leung Y K, Paul A K, Goodson K E, Plummer J D and Wong S 1997 IEEE Electron Dev. Lett. 18 414
|
|
| [14] | Zhang S D, Sin K O, Lai T M L and Ko P K 1999 IEEE Trans. Electron Dev. 46 1036
|
|
| [15] | Jiang H, Zhang B, Chen W, Li Z, Zheng C, Liu C, Rao Z and Dong B 2012 IEEE Proceedings of the 24th International Symposium on Power Semiconductor Devices and ICs, June 3-7, 2012, Bruges, Belgium, p. 173
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