Reactively sputtered Fe3O4-based films for spintronics

doi:10.1088/1674-1056/22/4/047505

Abstract Half metallic polycrystalline, epitaxial Fe₃O₄ films and Fe₃O₄-based heterostructures for spintronics were fabricated by DC reactive magnetron sputtering. Large tunneling magnetoresistance was found in the polycrystalline Fe₃O₄ films and attributed to the insulating grain boundaries. The pinning effect of the moments at the grain boundaries leads to a significant exchange bias. Frozen interfacial/surface moments induce weak saturation of the high-field magnetoresistance. The films show a moment rotation related butterfly-shaped magnetoresistance. It was found that in the films, natural growth defects, antiphase boundaries, and magnetocrystalline anisotropy play important roles in high-order anisotropic magnetoresistance. Spin injection from Fe₃O₄ films to semiconductive Si and ZnO was measured to be 45% and 28.5%, respectively. The positive magnetoresistance in the Fe₃O₄-based heterostructures is considered to be caused by a shift of the Fe₃O₄ eg ↑ band near the interface. Enhanced magnetization was observed in Fe₃O₄/BiFeO₃ heterostructures experimentally and further proved by first principle calculations. The enhanced magnetization can be explained by spin moments of the thin BiFeO₃ layer substantially reversing into a ferromagnetic arrangement under a strong coupling that is principally induced by electronic orbital reconstruction at the interface.

Keywords: reactively sputtered Fe₃O₄ films spintronics magnetoresistance interface

Received: 01 March 2013
Accepted manuscript online:

PACS:	75.47.-m	(Magnetotransport phenomena; materials for magnetotransport)
	72.25.Mk	(Spin transport through interfaces)
	81.15.Cd	(Deposition by sputtering)
	85.75.-d	(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51272174) and the Natural Science Foundation of Tianjin City (Grant No. 12JCYBJC11100).

Corresponding Authors: Bai Hai-Li
E-mail: baihaili@tju.edu.cn

Cite this article:

Li Peng (李鹏), Jin Chao (金朝), Mi Wen-Bo (米文博), Bai Hai-Li (白海力) Reactively sputtered Fe₃O₄-based films for spintronics 2013 Chin. Phys. B 22 047505

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Reactively sputtered Fe3O4-based films for spintronics

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Reactively sputtered Fe₃O₄-based films for spintronics