Recent progress on the planar Hall effect in quantum materials
Jingyuan Zhong(钟景元)1, Jincheng Zhuang(庄金呈)1,2,†, and Yi Du(杜轶)1,2,‡
1 School of Physics, Beihang University, Beijing 100191, China; 2 Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, China
Abstract The planar Hall effect (PHE), which originates from anisotropic magnetoresistance, presents a qualitative and simple approach to characterize electronic structures of quantum materials by applying an in-plane rotating magnetic field to induce identical oscillations in both longitudinal and transverse resistances. In this review, we focus on the recent research on the PHE in various quantum materials, including ferromagnetic materials, topological insulators, Weyl semimetals, and orbital anisotropic matters. Firstly, we briefly introduce the family of Hall effect and give a basic deduction of PHE formula with the second-order resistance tensor, showing the mechanism of the characteristic π-period oscillation in trigonometric function form with a π/4 phase delay between the longitudinal and transverse resistances. Then, we will introduce the four main mechanisms to realize PHE in quantum materials. After that, the origin of the anomalous planar Hall effect (APHE) results, of which the curve shapes deviate from that of PHE, will be reviewed and discussed. Finally, the challenges and prospects for this field of study are discussed.
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11904015), the Fundamental Research Funds for the Central Universities (Grant No. YWF-22-K-101), and the National Key R&D Program of China (Grant No. 2018YFE0202700).
Corresponding Authors:
Jincheng Zhuang, Yi Du
E-mail: jincheng@buaa.edu.cn;yi_du@buaa.edu.cn
Cite this article:
Jingyuan Zhong(钟景元), Jincheng Zhuang(庄金呈), and Yi Du(杜轶) Recent progress on the planar Hall effect in quantum materials 2023 Chin. Phys. B 32 047203
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