Broadband light-emitting from multilayer-stacked InAs/GaAs quantum dots

doi:10.1088/1674-1056/21/11/117305

Abstract We report the effect of the GaAs spacer layer thickness on the photoluminescence (PL) spectral bandwidth of InAs/GaAs self-assembled quantum dots (QDs). A PL spectral bandwidth of 158 nm is achieved with a five-layer stack of InAs QDs which has a 11-nm thick GaAs spacer layer. We investigate the optical and the structural properties of the multilayer-stacked InAs/GaAs QDs with different GaAs spacer layer thicknesses. The results show that the spacer thickness is a key parameter affecting the multi-stacked InAs/GaAs QDs for wide-spectrum emission.

Keywords: quantum dots broadband spectrum superluminescent diode

Received: 05 June 2012
Revised: 19 July 2012
Accepted manuscript online:

PACS:	73.21.La	(Quantum dots)
	78.67.Hc	(Quantum dots)
	85.60.Jb	(Light-emitting devices)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2006CB604904) and the National Natural Science Foundation of China (Grant Nos. 60976057, 60876086, and 60776037).

Corresponding Authors: Jin Peng
E-mail: pengjin@semi.ac.cn

Cite this article:

Liu Ning (刘宁), Jin Peng (金鹏), Wang Zhan-Guo (王占国 ) Broadband light-emitting from multilayer-stacked InAs/GaAs quantum dots 2012 Chin. Phys. B 21 117305

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Broadband light-emitting from multilayer-stacked InAs/GaAs quantum dots

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