Sb complexes and Zn interstitials in Sb-implanted ZnO epitaxial films

doi:10.1088/1674-1056/20/6/066104

Abstract In the present work, post-annealing is adopted to investigate the formation and the correlation of Sb complexes and Zn interstitials in Sb-ion implanted ZnO films, by using Raman scattering technique and electrical characterizations. The damage of Zn sublattice, produced by ion bombardment process is discerned from the unrecovered E₂ (L) peak in annealed high Sb⁺ dose implanted samples. It is suggested that the Zn sublattice may be strongly affected by the introduction of Sb dopant because of the formation of Sb_Zn-2V_Zn complex acceptor. The appearance of a new peak at 510 cm^-1 in the annealed high dose Sb⁺ implanted samples is speculated to result from (Zn interstitials-O interstitials) Zn_i-O_i complex, which is in a good accordance with the electrical measurement. The p-type ZnO is difficult to obtain from the Sb⁺ implantation, however, which can be realized by in-situ Sb doping with proper growth conditions instead.

Keywords: ZnO ion implantation Raman spectra molecular beam epitaxy

Received: 03 December 2010
Revised: 18 January 2011
Accepted manuscript online:

PACS:	61.72.U-	(Doping and impurity implantation)
	61.72.uj	(III-V and II-VI semiconductors)
	78.30.-j	(Infrared and Raman spectra)
	81.15.Hi	(Molecular, atomic, ion, and chemical beam epitaxy)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076007 and 50532090), the National Basic Research Program of China (Grant Nos. 2007CB936203, 2009CB929400, 2009AA033101, and 2011CB302002), the Knowledge Innovation Project of the Chinese Academy of Sciences, and the Research Council of Norway through the FRINAT "Understanding ZnO" Project.

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Liu Yao-Ping (刘尧平), Ying Min-Ju (英敏菊), Mei Zeng-Xia (梅增霞), Li Jun-Qiang (李俊强), Du Xiao-Long (杜小龙), A. Yu. Kuznetsov Sb complexes and Zn interstitials in Sb-implanted ZnO epitaxial films 2011 Chin. Phys. B 20 066104

[1]	Tang Z K, Wong G K L, Yu P, Kawasaki M, Ohtomo A, Koinuma H and Segawa Y 1998 Appl. Phys. Lett. 72 3270
[2]	Bagnall D M, Chen Y F, Zhu Z, Tao T, Koyama S, Shen M Y and Goto T 1997 Appl. Phys. Lett. 70 2230
[3]	Reynolds D C, Look D C, Jogai B, Litton C W, Cantwell G and Harsch W C 1999 Phys. Rev. B 60 2340
[4]	Neuvonen P T, Vines L, Kuznetsov A Yu, Svensson B G, Du X L, Tuomisto F and Hallén A 2009 Appl. Phys. Lett. 95 242111
[5]	Dunlop L, Kursumovic A and MacManus-Driscoll J L 2008 Appl. Phys. Lett. 93 172111
[6]	Wardle M G, Goss J P and Briddon P R 2005 Phys. Rev. B 71 155205
[7]	Janotti A and van de Walle C G 2007 Phys. Rev. B 76 165202
[8]	Park C H, Zhang S B and Wei S H 2002 Phys. Rev. B 66 073202
[9]	Mandalapu L J, Yang Z, Xiu F X, Zhao D T and Liu J L 2006 Appl. Phys. Lett. 88 092103
[10]	Chu S, Olmedo M, Yang Z, Kong J Y and Liu J L 2008 Appl. Phys. Lett. 93 183106
[11]	Limpijumnong S, Zhang S B, Wei S H and Park C H 2004 Phys. Rev. Lett. 92 155504
[12]	Wahl U, Correia J G, Mendoncca T and Decoster S 2009 Appl. Phys. Lett. 94 261901
[13]	Gu Q L, Ling C C, Brauer G, Anwand W, Skorupa W, Hsu Y F, Djurisic A B, Zhu C Y, Fung S and Lu L W 2008 Appl. Phys. Lett. 92 222109
[14]	Braunstein G, Muraviev A, Saxena H, Dhere N, Richter V and Kalish R 2005 Appl. Phys. Lett. 87 192103
[15]	Wang X N, Wang Y, Mei Z X, Dong J, Zeng Z Q, Yuan H T, Zhang T C, Du X L, Jia J F, Xue Q K, Zhang X N, Zhang Z, Li Z F and Lu W 2007 Appl. Phys. Lett. 90 151912
[16]	Guo Y, Liu Y P, Li J Q, Zhang S L, Mei Z X and Du X L 2010 Chin. Phys. Lett. 27 067203
[17]	özgür ü, Alivov Y I, Liu C, Teke A, Reshchikov M A, Dogan S, Avrutin V, Cho S J and Morkoc H 2005 J. Appl. Phys. 98 041301
[18]	Ke X W, Shan F K, Park Y S, Wang Y J, Zhang W Z, Kang T W and Fu D J 2007 Surf. Coat. Technol. 201 6797
[19]	Artus L, Cusco R, Alarcon-Llado E, Gonzalez-Diaz G, Martil I, Jimenez J, Wang B and Callahan M 2007 Appl. Phys. Lett. 90 181911
[20]	Wang J B, Zhong H M, Li Z F and Lu W 2006 Appl. Phys. Lett. 88 101913
[21]	Cusco R, Jimenez J, Wang B and Callahan M J 2007 Phys. Rev. B 75 165202
[22]	Bundesmann C, Ashkenov N, Schubert M, Spemann D, Butz T, Kaidashev E M, Lorenz M and Grundmann M 2003 Appl. Phys. Lett. 83 1974
[23]	Manj'on F J, Mar'hi B, Serrano J and Romero A H 2005 J. Appl. Phys. 97 053516
[24]	Friedrich F, Gluba M A and Nicke N H 2009 Appl. Phys. Lett. 95 141903
[25]	Look D C, Hemsky J W and Sizelove J R 1999 Phys. Rev. Lett. 82 2552

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Sb complexes and Zn interstitials in Sb-implanted ZnO epitaxial films

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