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Chin. Phys. B, 2026, Vol. 35(4): 047103    DOI: 10.1088/1674-1056/ae44f4
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

PT phase transition and non-Hermitian skin effect in vacancy-induced subbands of the Haldane model with gain and loss

Cui-Xian Guo(郭翠仙)1,2, Xiao-Ming Zhao(赵小明)3,4, and Su-Peng Kou(寇谡鹏)5,4,†
1 Beijing Key Laboratory of Optical Detection Technology for Oil and Gas, China University of Petroleum-Beijing, Beijing 102249, China;
2 Basic Research Center for Energy Interdisciplinary, College of Science, China University of Petroleum-Beijing, Beijing 102249, China;
3 Department of Physics and Institute of Theoretical Physics, University of Science and Technology Beijing, Beijing 100083, China;
4 Key Laboratory of Multiscale Spin Physics (Ministry of Education), Beijing Normal University, Beijing 100875, China;
5 Center for Advanced Quantum Studies, School of Physics and Astronomy, Beijing Normal University, Beijing 100875, China
Abstract  Defects can profoundly alter the properties of quantum materials, inducing emergent phenomena beyond the scope of their parent counterparts. Here, we construct effective models to investigate the properties of vacancy-induced subbands in the Haldane model with gain and loss, revealing that their behaviors are critically dependent on the spatial configuration of the vacancy array. Specifically, a sequence of parity-time ($\mathcal{PT}$) phase transitions occurs for the one-dimensional vacancy array across different sublattices, whereas the non-Hermitian skin effect (NHSE) — with its nontrivial spectral winding — manifests in a chain confined to a single sublattice. Notably, the NHSE arises in this subband even though the parent system lacks it. Our results demonstrate that vacancy defect engineering serves as a powerful approach to generate subsystems whose properties are decoupled from the parent Hamiltonian.
Keywords:  non-Hermitian physics      defect      parity-time symmetry      non-Hermitian skin effect  
Received:  13 November 2025      Revised:  11 February 2026      Accepted manuscript online:  12 February 2026
PACS:  71.55.-i (Impurity and defect levels)  
  03.65.Yz (Decoherence; open systems; quantum statistical methods)  
  11.30.Er (Charge conjugation, parity, time reversal, and other discrete symmetries)  
  73.20.-r (Electron states at surfaces and interfaces)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 12405030), the National Key Research and Development Program of China (Grant No. 2023YFA1406704), the Open Fund of Key Laboratory of Multiscale Spin Physics (Ministry of Education) Beijing Normal University (Grant No. SPIN2024K01), Beijing National Laboratory for Condensed Matter Physics (Grant No. 2025BNLCMPKF023), the Science Foundation of China University of Petroleum, Beijing (Grant No. 2462024SZBH003), Young Elite Scientists Sponsorship Program of the Beijing High Innovation Plan (Grant No. 20250934), Guangdong Basic and Applied Basic Research Foundation (Grant No. 2023A1515110081), and Fundamental Research Funds for the Central Universities, China (Grant Nos. FRF-TP-22-098A1 and FRF-IDRY-24-28).
Corresponding Authors:  Su-Peng Kou     E-mail:  spkou@bnu.edu.cn

Cite this article: 

Cui-Xian Guo(郭翠仙), Xiao-Ming Zhao(赵小明), and Su-Peng Kou(寇谡鹏) PT phase transition and non-Hermitian skin effect in vacancy-induced subbands of the Haldane model with gain and loss 2026 Chin. Phys. B 35 047103

[1] Ashida Y, Gong Z and Ueda M 2020 Adv. Phys. 69 249
[2] Bergholtz E J, Budich J C and Kunst F K 2021 Rev. Mod. Phys. 93 015005
[3] Ding K, Fang C and Ma G 2022 Nat. Rev. Phys. 4 745
[4] Moiseyev N 2011 Non-Hermitian Quantum Mechanics (New York: Cambridge University Press)
[5] Bender C M 2007 Rep. Prog. Phys. 70 947
[6] Yang K, Li Z, König J L K, Rødland L, Stålhammar M and Bergholtz E J 2024 Rep. Prog. Phys. 87 078002
[7] Guo A, Salamo G J, Duchesne D, Morandotti R, VolatierRavat M, Aimez V, Siviloglou G A and Christodoulides D N 2009 Phys. Rev. Lett. 103 093902
[8] Rüter C E, Makris K G, El-Ganainy R, Christodoulides D N, Segev M and Kip D 2010 Nat. Phys. 6 192
[9] Chong Y D, Ge L and Stone A D 2011 Phys. Rev. Lett. 106 093902
[10] Regensburger A, Bersch C, MiriMA, Onishchukov G, Christodoulides D N and Peschel U 2012 Nature 488 167
[11] Feng L, Xu Y L, Fegadolli W S, Lu M H, Oliveira J E B, Almeida V R, Chen Y F and Scherer A 2013 Nat. Mater. 12 108
[12] Wimmer M, Miri M A, Christodoulides D N and Peschel U 2015 Sci. Rep. 5 17760
[13] Weimann S, Kremer M, Plotnik Y, Lumer Y, Nolte S, Makris K G, Segev M, Rechtsman M C and Szameit A 2017 Nat. Mater. 16 433
[14] Zhu X, Ramezani H, Shi C, Zhu J and Zhang X 2014 Phys. Rev. X 4 031042
[15] Popa B I and Cummer S A 2014 Nat. Commun. 5 3398
[16] Fleury R, Sounas D and Alu A 2015 Nat. Commun. 6 5905
[17] Ding K, Ma G, Xiao M, Zhang Z Q and Chan C T 2016 Phys. Rev. X 6 021007
[18] Xiao L, Deng T, Wang K, Wang Z, Yi W and Xue P 2021 Phys. Rev. Lett. 126 230402
[19] Wang K, Xiao L, Budich J C, Yi W and Xue P 2021 Phys. Rev. Lett. 127 026404
[20] Wu Y, LiuW, Geng J, Song X, Ye X, Duan C K, Rong X and Du J 2019 Science 364 878
[21] Bender C M and Boettcher S 1998 Phys. Rev. Lett. 80 5243
[22] Hang C, Huang G and Konotop V V 2013 Phys. Rev. Lett. 110 083604
[23] Feng L, Xu Y L, Fegadolli W S, Lu M H, Oliveira J E B, Almeida V R, Chen Y F and A Scherer 2013 Nat. Mater. 12 108
[24] Peng B, Ö zdemir ? K, Lei F, Monifi F, Gianfreda M, Long G L, Fan S, Nori F, Bender C M and Yang L 2014 Nat. Phys. 10 394
[25] Feng L, Wong Z J, Ma R M, Wang Y and Zhang X 2014 Science 346 972
[26] Hodaei H, Miri M A, Heinrich M, Christodoulides D N and Khajavikhan M 2014 Science 346 975
[27] Weidemann S, Kremer M, Helbig T, Hofmann T, Stegmaier A, Greiter M, Thomale R and Szameit A 2020 Science 368 311
[28] Yao S and Wang Z 2018 Phys. Rev. Lett. 121 086803
[29] Yokomizo K and Murakami S 2019 Phys. Rev. Lett. 123 066404
[30] Kunst F K, Edvardsson E, Budich J C and Bergholtz E J 2018 Phys. Rev. Lett. 121 026808
[31] Zhang K, Yang Z and Fang C 2020 Phys. Rev. Lett. 125 126402
[32] Okuma N, Kawabata K, Shiozaki K and Sato M 2020 Phys. Rev. Lett. 124 086801
[33] Yang Z, Zhang K, Fang C and Hu J 2020 Phys. Rev. Lett. 125 226402
[34] Alvarez V M M, Vargas J E B and Torres L E F F 2018 Phys. Rev. B 97 121401
[35] Borgnia D S, Kruchkov A J and Slager R J 2020 Phys. Rev. Lett. 124 056802
[36] Guo C X, Liu C H, Zhao X M, Liu Y and Chen S 2021 Phys. Rev. Lett. 127 116801
[37] Lee C H and Thomale R 2019 Phys. Rev. B 99 201103
[38] Wang H Y, Song F and Wang Z 2024 Phys. Rev. X 14 021011
[39] Hu H 2025 Sci. Bull. 70 51
[40] Zhang K, Yang Z and Fang C 2022 Nat. Commun. 13 2496
[41] Fu B, Jia Z, Mu W, Yin Y, Zhang J and Tao X 2019 J. Semicond. 40 011804
[42] Klimov P V and Awschalom D D 2025 Appl. Sci. 15 5606
[43] Pearton S J, Norton D P, Ip K, Heo YWand Steiner T 2004 J. Vac. Sci. Technol. B 22 932
[44] Ugeda M M, Brihuega I, Guinea F and Gómez-Rodríguez J M 2010 Phys. Rev. Lett. 104 096804
[45] Schlenk T, Bair M, Wiebe J and Wiesendanger R 2012 Phys. Rev. Lett. 108 066801
[46] Haldane F D M 1988 Phys. Rev. Lett. 61 2015
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