Improved ferroelectricity in Mn-doped HfO2 (111) epitaxial thin films through controlled doping and substrate orientation

doi:10.1088/1674-1056/add1bc

Abstract Doped HfO$_2$ as an emerging ferroelectric material, holds considerable promise for non-volatile memory applications. Epitaxial growth of doped HfO$_2$ thin films is widely adopted as an effective technique for revealing the intrinsic ferroelectric properties. In this study, based on systematic structural, chemical and electrical investigations, the influences of Mn doping and substrate orientation on ferroelectric properties of Mn-doped HfO$_2$ epitaxial thin films are investigated. The results demonstrate that Mn-doped HfO$_2$ thin films with orthorhombic phase can be epitaxially grown along [111] out-of-plane direction on both SrTiO$_{3}$ (001) and (110) substrates, and 10% Mn-doping significantly stabilizes the orthorhombic polar phase and enhances the ferroelectric polarization. Interestingly, compared to the films on SrTiO$_{3}$ (001) substrate, the better crystallinity and reduction of oxygen vacancy amount in Mn-doped HfO$_2$ films grown on the SrTiO$_{3}$ (110) substrate are observed, which enhance the remanent polarization and reduce the coercive field. It provides an effective approach for the controllable regulation of defects and the enhancement of intrinsic ferroelectricity in HfO$_2$-based materials.

Keywords: HfO$_{2}$-based ferroelectric substrate orientation ferroelectricity defects

Received: 03 March 2025
Revised: 17 April 2025
Accepted manuscript online: 29 April 2025

PACS:	77.84.-s	(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
	77.55.fp	(Other ferroelectric films)
	77.80.-e	(Ferroelectricity and antiferroelectricity)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 52125204, 52250281, 52422209, 92163210, and U21A2066) and the National Key Research and Development Program of China (Grant Nos. 2024YFA1208601, 2022YFB3807602, and 2022YFB3807604).

Corresponding Authors: Shengchun Shen, Yuewei Yin
E-mail: scshen@ustc.edu.cn;yyw@ustc.edu.cn

Cite this article:

Jiayi Gu(顾嘉仪), Haiyi Zhang(张海义), Weijin Pan(潘炜进), Haifeng Bu(卜海峰), Zhijian Shen(沈志健), Shengchun Shen(沈胜春), Yuewei Yin(殷月伟), and Xiaoguang Li(李晓光) Improved ferroelectricity in Mn-doped HfO₂ (111) epitaxial thin films through controlled doping and substrate orientation 2025 Chin. Phys. B 34 087701

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Improved ferroelectricity in Mn-doped HfO2 (111) epitaxial thin films through controlled doping and substrate orientation

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Improved ferroelectricity in Mn-doped HfO₂ (111) epitaxial thin films through controlled doping and substrate orientation