Ga intercalation in van der Waals layers for advancing p-type Bi2Te3-based thermoelectrics
Yiyuan Chen(陈艺源)1,†, Qing Shi(石青)1,†, Yan Zhong(钟艳)1, Ruiheng Li(李瑞恒)1, Liwei Lin(林黎蔚)1, Ding Ren(任丁)1,‡, Bo Liu(刘波)1, and Ran Ang(昂然)1,2,§
1 Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China; 2 Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu 610065, China
Abstract Tetradymite-structured chalcogenides, such as BiTe and SbTe, are quasi-two-dimensional (2D) layered compounds, which are significant thermoelectric materials applied near room temperature. The intercalation of guest species in van der Waals (vdW) gap implemented for tunning properties has attracted much attention in recent years. We attempt to insert Ga atoms in the vdW gap between the Te layers in p-type BiSbTe (BST) for further improving thermoelectrics. The vdW-related defects (including extrinsic interstitial and intrinsic defects) induced by Ga intercalation can not only modulate the carrier concentration but also enhance the texture, thereby yielding excellent electrical properties, which are reflected in the power factor mWmK. Furthermore, the intercalation of Ga produces multi-scale lattice imperfections such as point defects, Te precipitations, and nanopores, realizing the low lattice thermal conductivity in BST-Ga samples. Ultimately, a peak at 373 K is achieved in the BST-1% Ga sample and greatly improved by compared to the pristine BST. The weak bonding of vdW interlayer interaction can boost the synergistic effect for advancing BST-based or other layered thermoelectrics.
Fund: Project supported by the National Key Research and Development Program of China (Grant Nos. 2022YFB3803900 and 2018YFA0702100), the Joint Funds of the National Natural Science Foundation of China and the Chinese Academy of Sciences’ Large-Scale Scientific Facility (Grant No. U1932106), and the Sichuan University Innovation Research Program of China (Grant No. 2020SCUNL112).
Corresponding Authors:
Ding Ren, Ran Ang
E-mail: rending2k@scu.edu.cn;rang@scu.edu.cn
Cite this article:
Yiyuan Chen(陈艺源), Qing Shi(石青), Yan Zhong(钟艳), Ruiheng Li(李瑞恒), Liwei Lin(林黎蔚), Ding Ren(任丁), Bo Liu(刘波), and Ran Ang(昂然) Ga intercalation in van der Waals layers for advancing p-type Bi2Te3-based thermoelectrics 2023 Chin. Phys. B 32 067201
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