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High responsivity photodetectors based on graphene/WSe2 heterostructure by photogating effect |
| Shuping Li(李淑萍)1,†, Ting Lei(雷挺)2,3,†, Zhongxing Yan(严仲兴)1, Yan Wang(王燕)1, Like Zhang(张黎可)4, Huayao Tu(涂华垚)2,3, Wenhua Shi(时文华)2,3,‡, and Zhongming Zeng(曾中明)2,3,§ |
1 Suzhou Industrial Park Institute of Services Outsourcing, Suzhou 215123, China;
2 Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
3 School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China;
4 School of Electronics and Information Engineering, Wuxi University, Wuxi 214105, China |
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Abstract Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material. However, the performance of graphene-based photodetectors is limited by weak absorption efficiency and rapid recombination of photoexcited carriers, leading to poor photodetection performance. Here, inspired by the photogating effect, we demonstrated a highly sensitive photodetector based on graphene/WSe2 vertical heterostructure where the WSe2 layer acts as both the light absorption layer and the localized grating layer. The graphene conductive channel is induced to produce more carriers by capacitive coupling. Due to the strong light absorption and high external quantum efficiency of multilayer WSe2, as well as the high carrier mobility of graphene, a high photocurrent is generated in the vertical heterostructure. As a result, the photodetector exhibits ultra-high responsivity of 3.85×104 A/W and external quantum efficiency of 1.3×107%. This finding demonstrates that photogating structures can effectively enhance the sensitivity of graphene-based photodetectors and may have great potential applications in future optoelectronic devices.
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Received: 26 June 2023
Revised: 15 August 2023
Accepted manuscript online: 18 September 2023
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PACS:
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85.60.-q
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(Optoelectronic devices)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11974379), the National Key Basic Research and Development Program of China (Grant No. 2021YFC2203400), and Jiangsu Vocational Education Integrated Circuit Technology “Double-Qualified” Famous Teacher Studio (Grant No. 2022-13). |
Corresponding Authors:
Wenhua Shi, Zhongming Zeng
E-mail: whshi2007@sinano.ac.cn;zmzeng2012@sinano.ac.cn
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Cite this article:
Shuping Li(李淑萍), Ting Lei(雷挺), Zhongxing Yan(严仲兴), Yan Wang(王燕), Like Zhang(张黎可), Huayao Tu(涂华垚), Wenhua Shi(时文华), and Zhongming Zeng(曾中明) High responsivity photodetectors based on graphene/WSe2 heterostructure by photogating effect 2024 Chin. Phys. B 33 018501
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