| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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InSe-Te van der Waals heterostructures for current rectification and photodetection |
| Hao Wang(王昊)1,2,†, Guo-Yu Xian(冼国裕)1,2,†, Li Liu(刘丽)1, Xuan-Ye Liu(刘轩冶)1,2, Hui Guo(郭辉)1,2,3, Li-Hong Bao(鲍丽宏)1,2,3,§, Hai-Tao Yang(杨海涛)1,2,3,‡, and Hong-Jun Gao(高鸿钧)1,2,3 |
1. Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2. University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China;
3. Songshan Lake Materials Laboratory, Dongguan 523808, China |
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Abstract As the basis of modern electronics and optoelectronics, high-performance, multi-functional p-n junctions have manifested and occupied an important position. However, the performance of the silicon-based p-n junctions declines gradually as the thickness approaches to few nanometers. The heterojunction constructed by two-dimensional (2D) materials can significantly improve the device performance compared with traditional technologies. Here, we report the InSe-Te type-II van der Waals heterostructures with rectification ratio up to 1.56×107 at drain-source voltage of ±2 V. The p-n junction exhibits a photovoltaic and photoelectric effect under different laser wavelengths and densities and has high photoresponsivity and detectivity under low irradiated light power. Moreover, the heterojunction has stable photo/dark current states and good photoelectric switching characteristics. Such high-performance heterostructured device based on 2D materials provides a new way for futural electronic and optoelectronic devices.
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Received: 20 January 2023
Revised: 19 April 2023
Accepted manuscript online:
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PACS:
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73.40.Ei
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(Rectification)
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73.40.-c
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(Electronic transport in interface structures)
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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72.40.+w
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(Photoconduction and photovoltaic effects)
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| Fund: Project supported by the Ministry of Science and Technology of China(Grant No.2018YFA0305800), the National Natural Science Foundation of China(Grant No.61888102), and the Chinese Academy of Sciences (Grant Nos.ZDBS-SSW-WHC001, XDB33030100, XDB30000000, and YSBR-003). |
Cite this article:
Hao Wang(王昊), Guo-Yu Xian(冼国裕), Li Liu(刘丽), Xuan-Ye Liu(刘轩冶), Hui Guo(郭辉), Li-Hong Bao(鲍丽宏), Hai-Tao Yang(杨海涛), and Hong-Jun Gao(高鸿钧) InSe-Te van der Waals heterostructures for current rectification and photodetection 2023 Chin. Phys. B 32 087303
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