| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Spin transport characteristics modulated by the GeBi interlayer in Y3Fe5O12/GeBi/Pt heterostructures |
| Mingming Li(李明明)1, Lei Zhang(张磊)2, Lichuan Jin(金立川)2, and Haizhong Guo(郭海中)1,3,† |
1 Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China;
2 State Key Laboratory of Electronic Thin Films & Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
3 Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou 450046, China |
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Abstract For the past few years, germanium-based semiconductor spintronics has attracted considerable interest due to its potential for integration into mainstream semiconductor technology. The main challenges in the development of modern semiconductor spintronics are the generation, detection, and manipulation of spin currents. Here, the transport characteristics of a spin current generated by spin pumping through a GeBi semiconductor barrier in Y3Fe5O12/GeBi/Pt heterostructures were investigated systematically. The effective spin-mixing conductance and inverse spin Hall voltage to quantitatively describe the spin transport characteristics were extracted. The spin-injection efficiency in the Y3Fe5O12/GeBi/Pt heterostructures is comparable to that of the Y3Fe5O12/Pt bilayer, and the inverse spin Hall voltage exponential decays with the increase in the barrier thickness. Furthermore, the band gap of the GeBi layer was tuned by changing the Bi content. The spin-injection efficiency at the YIG/semiconductor interface and the spin transportation within the semiconductor barrier are related to the band gap of the GeBi layer. Our results may be used as guidelines for the fabrication of efficient spin transmission structures and may lead to further studies on the impacts of different kinds of barrier materials.
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Received: 07 May 2023
Revised: 30 June 2023
Accepted manuscript online: 03 July 2023
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PACS:
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72.25.Mk
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(Spin transport through interfaces)
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76.50.+g
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(Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance)
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67.30.hj
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(Spin dynamics)
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| Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2021YFA0718701), the China Postdoctoral Science Foundation (Grant No. 2022M722888), and the National Natural Science Foundation of China (Grant Nos. 12174347 and 12004340). |
Corresponding Authors:
Haizhong Guo
E-mail: hguo@zzu.edu.cn
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Cite this article:
Mingming Li(李明明), Lei Zhang(张磊), Lichuan Jin(金立川), and Haizhong Guo(郭海中) Spin transport characteristics modulated by the GeBi interlayer in Y3Fe5O12/GeBi/Pt heterostructures 2024 Chin. Phys. B 33 027201
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