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Visualizing interface states in In2Se3–WSe2 monolayer lateral heterostructures |
| Da Huo(霍达), Yusong Bai(白玉松), Xiaoyu Lin(林笑宇), Jinghao Deng(邓京昊), Zemin Pan(潘泽敏), Chao Zhu(朱超), Chuansheng Liu(刘传胜)†, and Chendong Zhang(张晨栋)‡ |
| School of Physics and Technology, Wuhan University, Wuhan 430072, China |
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Abstract Recent findings of two-dimensional (2D) ferroelectric (FE) materials provide more possibilities for the development of 2D FE heterostructure electronic devices based on van der Waals materials and the application of FE devices under the limit of atomic layer thickness. In this paper, we report the in-situ fabrication and probing of electronic structures of In$_{2}$Se$_{3}$-WSe$_{2}$ lateral heterostructures, compared with most vertical FE heterostructures at present. Through molecular beam epitaxy, we fabricated lateral heterostructures with monolayer WSe$_{2}$ (three atomic layers) and monolayer In$_{2}$Se$_{3}$ (five atomic layers). Type-II band alignment was found to exist in either the lateral heterostructure composed of anti-FE $\beta '$-In$_{2}$Se$_{3}$ and WSe$_{2}$ or the lateral heterostructure composed of FE $\beta^*$-In$_{2}$Se$_{3}$ and WSe$_{2}$, and the band offsets could be modulated by ferroelectric polarization. More interestingly, interface states in both lateral heterostructures acted as narrow gap quantum wires, and the band gap of the interface state in the $\beta^*$-In$_{2}$Se$_{3}$-WSe$_{2}$ heterostructure was smaller than that in the $\beta '$-In$_{2}$Se$_{3}$ heterostructure. The fabrication of 2D FE heterostructure and the modulation of interface state provide a new platform for the development of FE devices.
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Received: 30 December 2022
Revised: 08 February 2023
Accepted manuscript online: 10 February 2023
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PACS:
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68.37.Ef
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(Scanning tunneling microscopy (including chemistry induced with STM))
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68.37.-d
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(Microscopy of surfaces, interfaces, and thin films)
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81.15.-z
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(Methods of deposition of films and coatings; film growth and epitaxy)
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79.60.Jv
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(Interfaces; heterostructures; nanostructures)
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| Fund: Project supported by the National Key R&D Program of China (Grant Nos. 2018YFA0305800 and 2018YFA0703700), the National Natural Science Foundation of China (Grant Nos. 11974012 and 12134011), and the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB3000000). |
Corresponding Authors:
Chuansheng Liu, Chendong Zhang
E-mail: csliuan@whu.edu.cn;cdzhang@whu.edu.cn
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Cite this article:
Da Huo(霍达), Yusong Bai(白玉松), Xiaoyu Lin(林笑宇), Jinghao Deng(邓京昊), Zemin Pan(潘泽敏), Chao Zhu(朱超), Chuansheng Liu(刘传胜), and Chendong Zhang(张晨栋) Visualizing interface states in In2Se3–WSe2 monolayer lateral heterostructures 2023 Chin. Phys. B 32 056803
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