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Ultra-high photoresponsive photodetector based on ReS2/SnS2 heterostructure |
| Binghui Wang(王冰辉)1,2, Yanhui Xing(邢艳辉)1,†, Shengyuan Dong(董晟园)1, Jiahao Li(李嘉豪)1, Jun Han(韩军)1, Huayao Tu(涂华垚)2, Ting Lei(雷挺)2, Wenxin He(贺雯馨)1, Baoshun Zhang(张宝顺)2, and Zhongming Zeng(曾中明)2,‡ |
1 Key Laboratory of Opto-electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology, Beijing 100124, China;
2 Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China |
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Abstract Photodetectors based on two-dimensional materials have attracted much attention because of their unique structure and outstanding performance. The response speed of single ReS2 photodetector is slow exceptionally, the heterostructure could improves the response speed of ReS2-based photodetector, but the photodetectors responsivity is reduced greatly, which restricts the development of ReS2. In this paper, a vertically structured ReS2 /SnS2 van der Waals heterostructure photodetectors is prepared, using ReS2 as the transport layer and SnS2 as the light absorbing layer to regulate the channel current. The device has an ultra-high photoconductive gain of 1010, which exhibits an ultra-high responsivity of 4706 A/W under 365-nm illumination and response speed in seconds, and has an ultra-high external quantum efficiency of 1.602×106% and a high detectivity of 5.29×1012 jones. The study for ReS2-based photodetector displays great potential for developing future optoelectronic devices.
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Received: 23 January 2023
Revised: 13 May 2023
Accepted manuscript online: 30 May 2023
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PACS:
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85.60.-q
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(Optoelectronic devices)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61574011, 60908012, 61575008, 61775007, 61731019, 61874145, 62074011, and 62134008), the Beijing Natural Science Foundation (Grant Nos. 4182015, 4172011, and 4202010), and Beijing Nova Program (Grant No. Z201100006820096). The authors would like to thank the Nano Fabrication Facility, Vacuum Interconnected Nanotech Workstation at Suzhou Institute of Nano-Tech and NanoBionics, Chinese Academy of Sciences, and Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences for their technical supports. |
Corresponding Authors:
Yanhui Xing, Zhongming Zeng
E-mail: xingyanhui@bjut.edu.cn;zmzeng2012@sinano.ac.cn
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Cite this article:
Binghui Wang(王冰辉), Yanhui Xing(邢艳辉), Shengyuan Dong(董晟园), Jiahao Li(李嘉豪), Jun Han(韩军), Huayao Tu(涂华垚), Ting Lei(雷挺), Wenxin He(贺雯馨), Baoshun Zhang(张宝顺), and Zhongming Zeng(曾中明) Ultra-high photoresponsive photodetector based on ReS2/SnS2 heterostructure 2023 Chin. Phys. B 32 098504
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