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Gate-controlled localization to delocalization transition of flat band wavefunction in twisted monolayer-bilayer graphene |
| Siyu Li(李思宇)1,2,†, Zhengwen Wang(王政文)2,†, Yucheng Xue(薛禹承)2, Lu Cao(曹路)3, Kenji Watanabe4, Takashi Taniguchi4, Hongjun Gao(高鸿钧)1,2, and Jinhai Mao(毛金海)2,‡ |
1 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China;
3 College of Materials Science and Optoelectronic Technology, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
4 Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba 305-0044, Japan |
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Abstract Twisted graphene systems with flat bands have attracted much attention for they are excellent platforms to research novel quantum phases. Recently, transport measurements about twisted monolayer-bilayer graphene (tMBG) have shown the existence of correlated states and topological states in this system. However, the direct observations of the band structures and the corresponding spatial distributions are still not sufficient. Here we show that the distributions of flat bands in tMBG host two different modes by scanning tunneling microscopy and spectroscopy (STM/S). By tuning our tMBG device from the empty filling state to the full filling state through the back gate, we observe that the distributions of two flat bands develop from localized mode to delocalized mode. This gate-controlled flat band wavefunction polarization is unique to the tMBG system. Our work suggests that tMBG is promising to simulate both twisted bilayer graphene (TBG) and twisted double bilayer graphene (tDBG) and would be an ideal platform to explore novel moiré physics.
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Received: 07 February 2023
Revised: 24 March 2023
Accepted manuscript online: 28 March 2023
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PACS:
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73.22.Pr
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(Electronic structure of graphene)
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68.37.Ef
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(Scanning tunneling microscopy (including chemistry induced with STM))
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85.30.Tv
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(Field effect devices)
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| Fund: We acknowledge support from the National Key R&D Program of China (Grant No. 2019YFA0307800), Beijing Natural Science Foundation (Grant No. Z190011), the National Natural Science Foundation of China (Grant No. 11974347), and Fundamental Research Funds for the Central Universities. |
Corresponding Authors:
Jinhai Mao
E-mail: jhmao@ucas.ac.cn
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Cite this article:
Siyu Li(李思宇), Zhengwen Wang(王政文), Yucheng Xue(薛禹承), Lu Cao(曹路), Kenji Watanabe, Takashi Taniguchi, Hongjun Gao(高鸿钧), and Jinhai Mao(毛金海) Gate-controlled localization to delocalization transition of flat band wavefunction in twisted monolayer-bilayer graphene 2023 Chin. Phys. B 32 067304
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