Analysis of displacement damage effects on the charge-coupled device induced by neutrons at Back-n in the China Spallation Neutron Source

doi:10.1088/1674-1056/acac07

Abstract Displacement damage effects on the charge-coupled device (CCD) induced by neutrons at the back-streaming white neutron source (Back-n) in the China Spallation Neutron Source (CSNS) are analyzed according to an online irradiation experiment. The hot pixels, random telegraph signal (RTS), mean dark signal, dark current and dark signal non-uniformity (DSNU) induced by Back-n are presented. The dark current is calculated according to the mean dark signal at various integration times. The single-particle displacement damage and transient response are also observed based on the online measurement data. The trends of hot pixels, mean dark signal, DSNU and RTS degradation are related to the integration time and irradiation fluence. The mean dark signal, dark current and DSNU² are nearly linear with neutron irradiation fluence when nearly all the pixels do not reach saturation. In addition, the mechanisms of the displacement damage effects on the CCD are demonstrated by combining the experimental results and technology computer-aided design (TCAD) simulation. Radiation-induced traps in the space charge region of the CCD will act as generation/recombination centers of electron-hole pairs, leading to an increase in the dark signal.

Keywords: displacement damage effects charge-coupled device (CCD) China Spallation Neutron Source (CSNS) mechanisms technology computer-aided design (TCAD)

Received: 14 July 2022
Revised: 22 November 2022
Accepted manuscript online: 16 December 2022

PACS:	61.80.-x	(Physical radiation effects, radiation damage)
	07.77.Ka	(Charged-particle beam sources and detectors)
	29.40.-n	(Radiation detectors)
	85.60.Gz	(Photodetectors (including infrared and CCD detectors))

Fund: Project supported by the Foundation of State Key Laboratory of China (Grant Nos. SKLIPR1903Z, 1803) and the National Natural Science Foundation of China (Grant Nos. U2167208 and 11875223).

Corresponding Authors: Zu-Jun Wang, Wei Chen
E-mail: wangzujun@nint.ac.cn;chenwei@nint.ac.cn

Cite this article:

Yuan-Yuan Xue(薛院院), Zu-Jun Wang(王祖军), Wei Chen(陈伟), Xiao-Qiang Guo(郭晓强), Zhi-Bin Yao(姚志斌), Bao-Ping He(何宝平), Xu Nie(聂栩), Shankun Lai(赖善坤), Gang Huang(黄港), Jiang-Kun Sheng(盛江坤), Wu-Ying Ma(马武英), and Shi-Long Gou(缑石龙) Analysis of displacement damage effects on the charge-coupled device induced by neutrons at Back-n in the China Spallation Neutron Source 2023 Chin. Phys. B 32 076101

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Analysis of displacement damage effects on the charge-coupled device induced by neutrons at Back-n in the China Spallation Neutron Source

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