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Chinese Physics B
Chin. Phys. B, 2020, Vol. 29(9): 097305    DOI: 10.1088/1674-1056/aba9c7
Special Issue: SPECIAL TOPIC — Physics in neuromorphic devices
TOPICAL REVIEW—Physics in neuromorphic devices Prev   Next  

Review of resistive switching mechanisms for memristive neuromorphic devices
Rui Yang(杨蕊)
State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
Abstract  Memristive devices have attracted intensive attention in developing hardware neuromorphic computing systems with high energy efficiency due to their simple structure, low power consumption, and rich switching dynamics resembling biological synapses and neurons in the last decades. Fruitful demonstrations have been achieved in memristive synapses neurons and neural networks in the last few years. Versatile dynamics are involved in the data processing and storage in biological neurons and synapses, which ask for carefully tuning the switching dynamics of the memristive emulators. Note that switching dynamics of the memristive devices are closely related to switching mechanisms. Herein, from the perspective of switching dynamics modulations, the mainstream switching mechanisms including redox reaction with ion migration and electronic effect have been systemically reviewed. The approaches to tune the switching dynamics in the devices with different mechanisms have been described. Finally, some other mechanisms involved in neuromorphic computing are briefly introduced.
Keywords:  memristive devices      resistive switching mechanisms      neuromorphic computing  
Received:  14 May 2020      Revised:  06 July 2020      Accepted manuscript online:  28 July 2020
PACS:  73.61.-r (Electrical properties of specific thin films)  
  68.37.-d (Microscopy of surfaces, interfaces, and thin films)  
  68.55.ag (Semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. U1832116 and 51772112) and Fundamental Research Funds for the Central Universities, China (Grant No. HUST: 2016YXZD058).
Corresponding Authors:  Rui Yang     E-mail:  yangrui@hust.edu.cn

Cite this article: 

Rui Yang(杨蕊) Review of resistive switching mechanisms for memristive neuromorphic devices 2020 Chin. Phys. B 29 097305

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