Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films

doi:10.1088/1674-1056/accb8a

Abstract The effects of ionizing and displacement irradiation of high-energy x-ray and 2-MeV proton on GaN thin films were investigated and compared in this study. The electrical properties of both P-GaN and N-GaN, separated from power devices, were gauged for fundamental analysis. It was found that the electrical properties of P-GaN were improved as a consequence of the disruption of the Mg-H bond induced by high-dose x-ray irradiation, as indicated by the Hall and circular transmission line model. Specifically, under a 100-Mrad(Si) x-ray dose, the specific contact resistance ρ_c of P-GaN decreased by 30%, and the hole carrier concentration increased significantly. Additionally, the atom displacement damage effect of a 2-MeV proton of 1×10¹³ p/cm² led to a significant degradation of the electrical properties of P-GaN, while those of N-GaN remained unchanged. P-GaN was found to be more sensitive to irradiation than N-GaN thin film. The effectiveness of x-ray irradiation in enhancing the electrical properties of P-GaN thin films was demonstrated in this study.

Keywords: x-ray radiation proton radiation GaN circular transmission line model (CTLM)

Received: 02 March 2023
Revised: 05 April 2023
Accepted manuscript online: 10 April 2023

PACS:	61.80.-x	(Physical radiation effects, radiation damage)
	61.80.Cb	(X-ray effects)
	73.61.-r	(Electrical properties of specific thin films)
	73.61.Ey	(III-V semiconductors)

Corresponding Authors: Lei Wang, Weihua Tang
E-mail: wangle@ime.ac.cn;whtang@bupt.edu.cn

Cite this article:

Aoxue Zhong(钟傲雪), Lei Wang(王磊), Yun Tang(唐蕴), Yongtao Yang(杨永涛), Jinjin Wang(王进进), Huiping Zhu(朱慧平), Zhenping Wu(吴真平), Weihua Tang(唐为华), and Bo Li(李博) Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films 2023 Chin. Phys. B 32 076102

[1] Morya Ajay Kumar, Gardner Matthew C, Anvari Bahareh, Liu Liming, Yepes Alejandro G, Doval-Gandoy Jesus and Toliyat Hamid A 2019 IEEE Trans. Transp. Electrif. 5 3
[2] Shi J, Zhang J, Yang L, Qu M, Qi D C and Zhang K H L 2021 Adv. Mater. 33 50
[3] Zhang Q Y, Li N, Zhang T, Dong D M, Yang Y T, Wang Y H, Dong Z G, Shen J Y, Zhou T H, Liang Y L, Tang W H, Wu Z P, Zhang Y and Hao J H 2023 Nat. Commun. 14 418
[4] Keshmiri N, Wang D, Agrawal B, Hou R and Emadi A 2020 IEEE Access 8 70553
[5] Jiang X, Li C H, Yang S X, Liang J H, Lai L K, Dong Q Y, Huang W, Liu X Y and Luo W J 2023 Chin. Phys. B 32 037201
[6] Zhang Y, Dadgar A and Palacios T 2018 J. Phys. D 51 273001
[7] Javier B F, Jesús M C A, José F S O and Erika L P 2021 Electronics 10 677
[8] Lin Z Z, Lü L, Zheng X F, Cao Y R, Hu P P, Fang X and Ma X H 2022 Chin. Phys. B 31 036103
[9] Wu Y, Zhang J, Zhao S, Wu Z, Wang Z, Mei B, Duan C, Zhao D, Zhang W, Liu Z and Hao Y 2022 Sci. China Inf. Sci. 65 182404
[10] Liu Y a and Luo W 2018 J. Semicond. 39 074005
[11] Umana-Membreno G A, Dell J M, Hessler T P, Nener B D, Parish G, Faraone L and Mishra U K 2002 Appl. Phys. Lett. 80 4354
[12] Umana-Membreno G A, Dell J M, Parish G, Nener B D, Faraone L and Mishra U K 2003 IEEE Trans. Electron Dev. 50 2326
[13] Shammi Verma K C P, Achamma Bobby, and Dinakar Kanjilal 2014 IEEE Trans. Dev. Mate. Reliability 14 721
[14] Xi Y, Hsieh Y L, Hwang Y H, Li S, Ren F, Pearton S J, Patrick E, Law M E, Yang G, Kim H Y, Kim J, Baca A G, Allerman A A and Sanchez C A 2014 J. Vac. Sci. Technol. B 32 012201
[15] Kumar S, Mariswamy V K, Kumar A, Kandasami A and Sannathammegowda K 2020 ECS J. Solid State Sci. 9 093017
[16] Fan J B, Ling S Y, Liu H X, Duan L, Zhang Y, Guo T T, Wei X and He Q 2020 Chin. Phys. B 29 117701
[17] Wan X, Baker O K, McCurdy M W, Zhang E X, Zafrani M, Wainwright S P, Xu J, Bo H L, Reed R A, Fleetwood D M and Ma T P 2017 IEEE Trans. Nucl. Sci. 64 253
[18] Yang Y T, Zhu H P, Wang L, Jiang Y C, Wang T Q, Liu C M, Li B, Tang W H, Wu Z P, Yang Z B and Li D F 2022 Mater. & Des. 221 110944
[19] Okada H, Okada Y, Sekiguchi H, Wakahara A, Sato S i and Ohshima T 2014 IEICE Trans. Electron E97.C 409
[20] Kaplar R J, Allerman A A, Armstrong A M, Crawford M H, Dickerson J R, Fischer A J, Baca A G and Douglas E A 2017 ECS J. Solid State Sci. Technol. 6 Q3061
[21] Li X J, Zhao D G, Jiang D S, Chen P, Zhu J J, Liu Z S, Le L C, Yang J, He X G, Zhang L Q, Liu J P, Zhang S M and Yang H 2015 Chin. Phys. B 24 096804
[22] Tetsuo N, Nobuyuki I, Kazuyoshi T, Kataoka K and Kachi T 2018 J. Appl Phys. 124 165706
[23] Li W, Nomoto K, Lee K, Islam S M, Hu Z, Zhu M, Gao X, Xie J, Pilla M, Jena D and Xing H G 2018 Appl. Phys. Lett. 113 062105
[24] Xingze H, Xinwen Z and Kuo C C J 2013 IEEE Access 1 67
[25] Polyakov A Y, Pearton S J, Frenzer P, Ren F, Liu L and Kim J 2013 J. Mater. Chem. C 1 877
[26] Pearton S J, Deist R, Ren F, Liu L, Polyakov A Y and Kim J 2013 J. Vac. Sci. Technol. A 31 050801
[27] Huang M, Li H and Chen S 2021 Phys. Status Solidi A 218 2000723
[28] Van de Walle C G and Neugebauer J 2004 J. Appl. Phys. 95 3851

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Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films

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