| ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS |
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Optically pumped wavelength-tunable lasing from a GaN beam cavity with an integrated Joule heater pivoted on Si |
| Feifei Qin(秦飞飞)1, Yang Sun(孙阳)1, Ying Yang(杨颖)1, Xin Li(李欣)1,2, Xu Wang(王旭)3, Junfeng Lu(卢俊峰)4, Yongjin Wang(王永进)1, and Gangyi Zhu(朱刚毅)1,† |
1 GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;
2 Key Laboratory of Broadband Wireless Communication and Sensor Network Technology(Nanjing University of Posts and Telecommunications, Ministry of Education), Nanjing 210003, China;
3 Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China;
4 College of Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China |
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Abstract Dynamically tunable laser sources are highly promising for realizing visionary concepts of integrated photonic circuits and other applications. In this paper, a GaN-based laser with an integrated PN junction heater on Si is fabricated. The photoluminescence properties of the GaN beam cavity are controlled by temperature, and the Joule heater provides electrically driven regulation of temperature. These two features of the cavity make it possible to realize convenient tuning of the lasing properties. The multi-functional GaN beam cavity achieves optically pumped lasing with a single mode near 362.4 nm with a high Q-factor of 1394. The temperature of this device increases by 0-5 ℃ under the Joule heating effect. Then, electrical control of the lasing mode is demonstrated. The lasing resonant peak shows a continuous redshift of about 0.5 nm and the device also exhibits dynamic switching of its lasing mode. The lasing modulation can be ascribed to temperature-induced reduction of the bandgap. Our work may be of benefit for external optical modulation in future chip-based optoelectronic devices.
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Received: 13 December 2022
Revised: 11 February 2023
Accepted manuscript online: 02 March 2023
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PACS:
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42.25.Bs
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(Wave propagation, transmission and absorption)
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28.52.Fa
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(Materials)
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42.55.-f
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(Lasers)
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| Fund: Project supported by the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20210593), the Foundation of Jiangsu Provincial Double Innovation Doctor Program (Grant No. 30644), the National Natural Science Foundation of China (Grant No. 62204127), State Key Laboratory of Luminescence and Applications (Grant No. SKLA 202104), open research fund of Key Lab of Broadband Wireless Communication and Sensor Network Technology (Nanjing University of Posts and Telecommunications, Ministry of Education). |
Corresponding Authors:
Gangyi Zhu
E-mail: zhugangyi@njupt.edu.cn
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Cite this article:
Feifei Qin(秦飞飞), Yang Sun(孙阳), Ying Yang(杨颖), Xin Li(李欣), Xu Wang(王旭), Junfeng Lu(卢俊峰), Yongjin Wang(王永进), and Gangyi Zhu(朱刚毅) Optically pumped wavelength-tunable lasing from a GaN beam cavity with an integrated Joule heater pivoted on Si 2023 Chin. Phys. B 32 054210
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