Application of graphene vertical field effect to regulation of organic light-emitting transistors

doi:10.1088/1674-1056/ab81f3

Abstract The luminescence intensity regulation of organic light-emitting transistor (OLED) device can be achieved effectively by the combination of graphene vertical field effect transistor (GVFET) and OLED. In this paper, we fabricate and characterize the graphene vertical field-effect transistor with gate dielectric of ion-gel film, confirming that its current switching ratio reaches up to 10². Because of the property of high light transmittance in ion-gel film, the OLED device prepared with graphene/PEDOT:PSS as composite anode exhibits good optical properties. We also prepare the graphene vertical organic light-emitting field effect transistor (GVOLEFET) by the combination of GVFET and graphene OLED, analyzing its electrical and optical properties, and confirming that the luminescence intensity can be significantly changed by regulating the gate voltage.

Keywords: graphene vertical field effect transistor organic light-emitting transistor ion-gel film gate voltage regulation

Received: 15 November 2019
Revised: 09 March 2020
Accepted manuscript online:

PACS:	74.25.Gz	(Optical properties)
	81.05.ue	(Graphene)
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 31872901) and the National Key Research and Development Program of China (Grant No. 2016YFA0501602).

Corresponding Authors: Long Ba
E-mail: balong@seu.edu.cn

Cite this article:

Hang Song(宋航), Hao Wu(吴昊), Hai-Yang Lu(陆海阳), Zhi-Hao Yang(杨志浩), Long Ba(巴龙) Application of graphene vertical field effect to regulation of organic light-emitting transistors 2020 Chin. Phys. B 29 057401

[1]	Tang C W, Vanslyke S A and Chen C H 1989 J. Appl. Phys. 65 3610
[2]	Chiang C J, Winscom C, Bull S and Monkman A 2009 Org. Electron. 10 1268
[3]	Choi M C, Kim Y and Ha C S 2008 Prog. Polym. Sci. 33 581
[4]	Zhang Y, Tang T, Girit C, Hao Z, Martin M C, Zettl A, Crommie M F, Shen Y R and Wang F 2009 Nature 459 820
[5]	Park J S and Choi H J 2015 Phys. Rev. B 92 045042
[6]	Geim A K 2009 Science 324 1530
[7]	Geim A K and Novoselov K S 2007 Nat. Mater. 6 183
[8]	Li N, Oida S, Tulevski G S, Han S J, Hannon J B, Sadana D K and Chen T C 2013 Nat. Commun. 4 2294
[9]	Cho H, Shin J W, Cho N, Moon J, Han J H, Kwon Y D, Cho S and Lee J I 2015 IEEE J. Sel. Top. Quantum Electron. 22 48
[10]	Han T H, Lee Y, Choi M R, Woo S H, Bae S H, Hong B H, Ahn J H and Lee T W 2012 Nat. Photon. 6 105
[11]	Zhu Z C, Murtaza I, Meng H and Huang W 2017 Rsc Adv. 7 17387
[12]	Shih C J, Pfattner R, Chiu Y C, Liu N, Lei T, Kong D, Kim Y, Chou H H, Bae W G and Bao Z 2015 Nano Lett. 15 7587
[13]	Britnell L, Gorbachev R V, Jalil R, Belle B D, Schedin F, Mishchenko A, Georgiou T, Katsnelson M I, Eaves L and Morozov S V 2012 Science 335 947
[14]	Thanasis G, Rashid J, Belle B D, Liam B, Gorbachev R V, Morozov S V, Yong-Jin K, Ali G, Haigh S J and Oleg M 2013 Nat. Nanotechnol. 8 100
[15]	Yu H, Dong Z, Guo J, Kim D and So F 2016 Acs Appl. Mater Interfaces 8 10430
[16]	Kim B J, Jang H, Lee S K, Hong B H, Ahn J H and Cho J H 2010 Nano Lett. 10 3464
[17]	Cho J H, Lee J, Xia Y, Kim B S, He Y, Renn M J, Lodge T P and Frisbie C D 2008 Nat. Mater. 7 900
[18]	Lee S, Kim B J, Jang H, Yoon S C and Ahn J 2011 Nano Lett. 11 4642
[19]	Bard A J and Faulkner L R 1983 J. Chem. Educ. 60 1
[20]	Song H, Liu J, Chen C and Ba L 2019 Acta Phys. Sin. 68 230 (in Chinese)
[21]	Beams R and Novotny L 2015 J. Phys.: Condens. Matter 27 83002
[22]	Lee K H, Kang M S, Zhang S, Cu Y, Lodge T P and Frisbie C D 2012 Adv. Mater. 24 4457
[23]	Tao J, Zhao C Z, Zhao C, Taechakumput P, Werner M, Taylor S and Chalker P R 2012 Materials 5 1005
[24]	Li J, Zhao C, Zhang H, Zhang J, P, Yang C, Xia Y and Fan D 2016 Chin. Phys. B 25 028402
[25]	Gunawardane K and Kularatna N 2018 Iet Power Electron. 11 229
[26]	Lin Y J and Zeng J J 2013 Appl. Phys. Lett. 102 32104
[27]	Tsai Y S, Juang F S, Yang T H, Yokoyama M C, Ji L W and Su Y K 2008 J. Phys. & Chem. Solids 69 764
[28]	Wu X, Li F, Wei W and Guo T 2014 Vacuum 101 53
[29]	Liu L H, Shang W J, Han C, Zhang Q, Yao Y, Ma X, Wang M, Yu H, Duan Y and Sun J 2018 Acs Appl. Mater. Interfaces 8 7289
[30]	Colvin V L, Schlamp M C and Alivisatos A P 1994 Nature 370 354

[1]	Exploration of structural, optical, and photoluminescent properties of (1-x)NiCo₂O₄/xPbS nanocomposites for optoelectronic applications Zein K Heiba, Mohamed Bakr Mohamed, Noura M Farag, and Ali Badawi. Chin. Phys. B, 2022, 31(6): 067801.
[2]	Graphene-based heterojunction for enhanced photodetectors Haiting Yao(姚海婷), Xin Guo(郭鑫), Aida Bao(鲍爱达), Haiyang Mao(毛海央),Youchun Ma(马游春), and Xuechao Li(李学超). Chin. Phys. B, 2022, 31(3): 038501.
[3]	Raman phonon anomalies in Sr(Fe_1-xCo_x)₂As₂ Yanxing Yang(杨彦兴), Hewei Zhang(张鹤巍), and Haizheng Zhuang(庄海正). Chin. Phys. B, 2022, 31(2): 027401.
[4]	On the structural and optical properties investigation of annealed Zn nanorods in the oxygen flux Fatemeh Abdi. Chin. Phys. B, 2021, 30(11): 117802.
[5]	Gas sensor using gold doped copper oxide nanostructured thin films as modified cladding fiber Hussein T. Salloom, Rushdi I. Jasim, Nadir Fadhil Habubi, Sami Salman Chiad, M Jadan, and Jihad S. Addasi. Chin. Phys. B, 2021, 30(6): 068505.
[6]	Effect of graphene grain boundaries on MoS₂/graphene heterostructures Yue Zhang(张悦), Xiangzhe Zhang(张祥喆), Chuyun Deng(邓楚芸), Qi Ge(葛奇), Junjie Huang(黄俊杰), Jie Lu(卢捷), Gaoxiang Lin(林高翔), Zekai Weng(翁泽锴), Xueao Zhang(张学骜), Weiwei Cai(蔡伟伟). Chin. Phys. B, 2020, 29(6): 067403.
[7]	Generalized Drude model and electromagnetic screening in metals and superconductors Da Wang(王达). Chin. Phys. B, 2018, 27(5): 057401.
[8]	The effect of replacing pnictogen elements on the physical properties of SrMg₂X₂ (X=N, P, As, Sb, Bi) Zintl compounds G Murtaza, Abdul Ahad Khan, M Yaseen, A Laref, Naeem Ullah, Inayat ur Rahman. Chin. Phys. B, 2018, 27(4): 047102.
[9]	Shape controllable synthesis and enhanced upconversion photoluminescence of β-NaGdF₄:Yb³⁺, Er³⁺ nanocrystals by introducing Mg²⁺ Yong-Xin Yang(杨永馨), Zheng Xu(徐征), Su-Ling Zhao(赵谡玲), Zhi-Qin Liang(梁志琴), Wei Zhu(朱薇), Jun-Jie Zhang(张俊杰). Chin. Phys. B, 2017, 26(8): 087801.
[10]	Effect of anionic ordering on the electronic and optical properties of BaTaO₂N: TB-mBJ density functional calculation K Bettine, O Sahnoun, M Sahnoun, M Driz. Chin. Phys. B, 2017, 26(5): 057101.
[11]	The electronic, optical, and thermodynamical properties of tetragonal, monoclinic, and orthorhombic M₃N₄ (M=Si, Ge, Sn): A first-principles study Dong Chen(陈东), Ke Cheng(程科), Bei-Ying Qi(齐蓓影). Chin. Phys. B, 2017, 26(4): 046303.
[12]	Time-dependent evolution process of Sb₂Te₃ from nanoplates to nanorods and their Raman scattering properties Xiu-Qing Meng(孟秀清), Ning Tang(汤宁), Mian-Zeng Zhong(钟绵增), Hui-Qun Ye(叶慧群), Yun-Zhang Fang(方允樟). Chin. Phys. B, 2016, 25(10): 107105.
[13]	Evaluation of electrical and optical characteristics of ZnO/CdS/CIS thin film solar cell Hadi Zarei, Rasoul Malekfar. Chin. Phys. B, 2016, 25(2): 027103.
[14]	What makes the T_c of FeSe/SrTiO₃ so high? Dung-Hai Lee. Chin. Phys. B, 2015, 24(11): 117405.
[15]	Chemical modification of silicene Wang Rong (王蓉), Xu Ming-Sheng (徐明生), Pi Xiao-Dong (皮孝东). Chin. Phys. B, 2015, 24(8): 086807.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Application of graphene vertical field effect to regulation of organic light-emitting transistors

Cite this article:

Online attention