Improvement of high-frequency properties of Co2FeSi Heusler films by ultrathin Ru underlayer

doi:10.1088/1674-1056/ab7802

Abstract Heusler Co₂FeSi films with a uniaxial magnetic anisotropy and high ferromagnetic resonance frequency f_r were deposited by an oblique sputtering technique on Ru underlayers with various thicknesses t_Ru from 0 nm to 5 nm. It is revealed that the Ru underlayers reduce the grain size of Co₂FeSi, dramatically enhance the magnetic anisotropy field H_K induced by the internal stress from 242 Oe (1 Oe=79.5775 A·m^-1) to 582 Oe with an increment ratio of 2.4, while a low damping coefficient remains. The result of damping implies that the continuous interface between Ru and Co₂FeSi induces a large in-plane anisotropic field without introducing additional external damping. As a result, excellent high-frequency soft magnetic properties with f_r up to 6.69 GHz are achieved.

Keywords: oblique sputtering ferromagnetic resonance Ru underlayer Heusler thin film

Received: 16 December 2019
Revised: 17 February 2020
Accepted manuscript online:

PACS:	62.25.Fg	(High-frequency properties, responses to resonant or transient (time-dependent) fields)
	75.70.-i	(Magnetic properties of thin films, surfaces, and interfaces)
	75.30.Gw	(Magnetic anisotropy)
	71.55.Ak	(Metals, semimetals, and alloys)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11674187 and 51871127) and the Fund from the Technology on Electronic Test & Measurement Laboratory (Grant No. 6142001180103).

Corresponding Authors: Shandong Li
E-mail: lishd@qdu.edu.cn

Cite this article:

Cuiling Wang(王翠玲), Shouheng Zhang(张守珩), Shandong Li(李山东), Honglei Du(杜洪磊), Guoxia Zhao(赵国霞), Derang Cao(曹德让) Improvement of high-frequency properties of Co₂FeSi Heusler films by ultrathin Ru underlayer 2020 Chin. Phys. B 29 046202

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Improvement of high-frequency properties of Co2FeSi Heusler films by ultrathin Ru underlayer

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Improvement of high-frequency properties of Co₂FeSi Heusler films by ultrathin Ru underlayer