Optical waveguide in Nd: Bi12SiO20 crystal produced bymulti-energy C ion implantation

doi:10.1088/1674-1056/26/7/076105

Abstract We report the fabrication of a planar waveguide in the Nd:Bi₁₂SiO₂₀ crystal by multi-energy C ions at room temperature. The waveguide is annealed at 200℃, 260℃, and 300℃ in succession each for 30 min in an open oven. The effective refractive index profiles at transverse electric (TE) polarization are stable after the annealing treatments. Damage distribution for multi-energy C ion implanted in Nd:Bi₁₂SiO₂₀ crystal is calculated by SRIM 2010. The Raman and fluorescence spectra of the Nd:Bi₁₂SiO₂₀ crystal are collected by an excitation beam at 633 nm and 473 nm, respectively. The results indicate the stabilization of the optical waveguide in Nd:Bi₁₂SiO₂₀ crystal.

Keywords: ion implantation Nd:Bi₁₂SiO₂₀ crystal

Received: 23 December 2016
Revised: 05 April 2017
Accepted manuscript online:

PACS:

61.80.Jh

(Ion radiation effects)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos.11404194 and 11274188),the Promotive Research Fund for Excellent Young and Middle-aged Scientisits of Shandong Province,China (Grant No.BS2015SF003),the China Postdoctoral Science Foundation (Grant Nos.2015M582053 and 2016T90609),the Qingdao Municipal Postdoctoral Application Research Project,China (Grant No.2015131),the State Key Laboratory of Nuclear Physics and Technology at Peking University,China,and the State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (MOE) at Shandong University,China.

Corresponding Authors: Tao Liu, Wei-Jin Kong
E-mail: liutphy@163.com;kwjsd@163.com

Cite this article:

Tao Liu(刘涛), Wei-Jin Kong(孔伟金), Ying-Ying Ren(任莹莹), Yan Cheng(成燕) Optical waveguide in Nd: Bi₁₂SiO₂₀ crystal produced bymulti-energy C ion implantation 2017 Chin. Phys. B 26 076105

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Optical waveguide in Nd: Bi12SiO20 crystal produced bymulti-energy C ion implantation

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Optical waveguide in Nd: Bi₁₂SiO₂₀ crystal produced bymulti-energy C ion implantation