Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC

doi:10.1088/1674-1056/25/5/057703

Abstract We have investigated the electron affinity of Si-doped AlN films (N_Si= 1.0 ×10¹⁸-1.0×10¹⁹ cm^-3) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition (MOCVD) under low pressure on the n-type (001)6H-SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy (UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 eV for the 400-nm-thick one. Accompanying the x-ray photoelectron spectroscopy (XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations.

Keywords: AlN electron affinity photoelectron spectroscopy metalorganic chemical vapor deposition

Received: 10 October 2015
Revised: 13 January 2016
Accepted manuscript online:

PACS:	77.55.hd	(AlN)
	79.60.-i	(Photoemission and photoelectron spectra)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61574135, 61574134, 61474142, 61474110, 61377020, 61376089, 61223005, and 61321063), the One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).

Corresponding Authors: Ping Chen
E-mail: pchen@semi.ac.cn

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Feng Liang(梁锋), Ping Chen(陈平), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Zhi-Juan Zhao(赵志娟), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Jing Yang(杨静), Wei Liu(刘炜), Xiao-Guang He(何晓光), Xiao-Jing Li(李晓静), Xiang Li(李翔), Shuang-Tao Liu(刘双韬), Hui Yang(杨辉), Li-Qun Zhang(张立群), Jian-Ping Liu(刘建平), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同) Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC 2016 Chin. Phys. B 25 057703

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Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC

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