Preparation of AlN film grown on sputter-deposited and annealed AlN buffer layer via HVPE
Di-Di Li(李迪迪)1, 3, Jing-Jing Chen(陈晶晶)1, 3, Xu-Jun Su(苏旭军)1, Jun Huang(黄俊) 1, Mu-Tong Niu(牛牧童) 1, Jin-Tong Xu(许金通)4, and Ke Xu(徐科) 1, 2, 3,†
1 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China; 2 Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China; 3 School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China; 4 Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Abstract AlN films grown on sputter-deposited and annealed AlN buffer layer by high temperature hydride vapor phase epitaxy (HVPE) have been fabricated and structurally characterized. The crystalline quality and surface morphology of as-grown AlN films with various V/III ratios were studied and compared. The XRD results showed that the crystalline quality of the AlN film could be optimized when the growth V/III ratio was 150. At the same time, the full width at half-maximum (FWHM) values of (0002)-and (102)-plane were 64 arcsec and 648 arcsec, respectively. As revealed by AFM, the AlN films grown with higher V/III ratios of 150 and 300 exhibited apparent hillock-like surface structure due to the low density of screw threading dislocation (TD). The defects microstructure and strain field around the HVPE-AlN/sputtered-AlN/sapphire interfaces have been investigated by transmission electron microscopy (TEM) technique combined with geometric phase analysis (GPA). It was found that the screw TDs within AlN films intend to turn into loops or half-loops after originating from the AlN/sapphire interface, while the edge ones would bend first and then reacted with others within a region of 400 nm above the interface. Consequently, part of the edge TDs propagated to the surface vertically. The GPA analysis indicated that the voids extending from sapphire to HVPE-AlN layer were beneficial to relax the interfacial strain of the best quality AlN film grown with a V/III ratio of 150.
(Defects and impurities in crystals; microstructure)
Fund: Project supported by the National Key Technologies R&D Program of China (Grant No. 2017YFB0404100) and Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences.
Di-Di Li(李迪迪), Jing-Jing Chen(陈晶晶), Xu-Jun Su(苏旭军), Jun Huang(黄俊), Mu-Tong Niu(牛牧童), Jin-Tong Xu(许金通), and Ke Xu(徐科) Preparation of AlN film grown on sputter-deposited and annealed AlN buffer layer via HVPE 2021 Chin. Phys. B 30 036801
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