1 School of Physical Science and Technology and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China; 2 The Key Laboratory of Thin Films of Jiangsu Province, Soochow University, Suzhou 215006, China; 3 Laboratory for Space Environment and Physical Sciences, Harbin Institute of Technology, Harbin 150001, China; 4 Analysis and Testing Center, Soochow University, Suzhou 215123, China
Abstract We report an approach to the rapid, one-step, preparation of a variety of wide-bandgap silicon carbide/graphene nanosheet (SiC/GNSs) composites by using a high-density helicon wave plasma (HWP) source. The microstructure and morphology of the SiC/GNSs are characterized by using scanning electron microscopy (SEM), Raman spectroscopy, x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and fluorescence (PL). The nucleation mechanism and the growth model are discussed. The existence of SiC and graphene structure are confirmed by XRD and Raman spectra. The electron excitation temperature is calculated by the intensity ratio method of optical emission spectroscopy. The main peak in the PL test is observed at 420 nm, with a corresponding bandgap of 2.95 eV that indicates the potential for broad application in blue light emission and ultraviolet light emission, field electron emission, and display devices.
Fund: Project supported by the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD) and Postgraduate Research & Practice Innovation Program of Jiangsu Province, China (Grant No. KYCX20_2649).
Jia-Li Chen(陈佳丽), Pei-Yu Ji(季佩宇), Cheng-Gang Jin(金成刚), Lan-Jian Zhuge(诸葛兰剑), and Xue-Mei Wu(吴雪梅) Synthesis of SiC/graphene nanosheet composites by helicon wave plasma 2021 Chin. Phys. B 30 075201
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