Distribution of electron traps in SiO2/HfO2 nMOSFET

doi:10.1088/1674-1056/25/5/057702

Abstract In this paper, the principle of discharge-based pulsed I-V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO₂ layer have been extracted. Two peaks are observed, which are located at ΔE~-1.0 eV and -1.43 eV, respectively. It is found that the former one is close to the SiO₂/HfO₂ interface and the latter one is close to the gate electrode. It is also observed that the maximum discharge time has little effect on the energy distribution. Finally, the impact of electrical stress on the HfO₂ layer is also studied. During stress, no new electron traps and interface states are generated. Meanwhile, the electrical stress also has no impact on the energy and spatial distribution of as-grown traps. The results provide valuable information for theoretical modeling establishment, material assessment, and reliability improvement for advanced semiconductor devices.

Keywords: energy and spatial distribution electron trap HfO₂

Received: 12 January 2016
Revised: 31 January 2016
Accepted manuscript online:

PACS:	77.55.D-
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	73.61.Ng	(Insulators)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the New Experiment Development Funds for Xidian University, China (Grant No. SY1434), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China (Grant No. JY0600132501).

Corresponding Authors: Xue-Feng Zheng
E-mail: xfzheng@mail.xidian.edu.cn

Cite this article:

Xiao-Hui Hou(侯晓慧), Xue-Feng Zheng(郑雪峰), Ao-Chen Wang(王奥琛), Ying-Zhe Wang(王颖哲), Hao-Yu Wen(文浩宇), Zhi-Jing Liu(刘志镜), Xiao-Wei Li(李小炜), Yin-He Wu(吴银河) Distribution of electron traps in SiO₂/HfO₂ nMOSFET 2016 Chin. Phys. B 25 057702

[1]	Kauerauf T, Govoreanu B, Degraeve R, Groeseneken G and Maes H 2005 Solid-State Electron. 49 695
[2]	Zahid M B, Degraeve R, Pantisano L, Zhang J F and Groeseneken G 2007 IEEE Annual International Reliability Physics Symposium 55
[3]	Fan J, Liu H, Gao B, Ma F, Zhuo Q and Hao Y 2012 Chin. Phys. B 21 027702
[4]	Hao Y, Yang L, Ma X, Ma J, Cao M, Pan C, Wang C and Zhang J 2011 IEEE Electron Dev. Lett. 32 626
[5]	Koudymov A, Wang C X, Adivarahan V, Yang J, Simin G and Khan M A 2007 IEEE Electron Dev. Lett. 28 5
[6]	Kim K 2005 Tech. Dig. Int. Electron. Devices Meet. p. 323
[7]	Zhao C Z, Zhang J F, Zahid M B, Govoreanu B, Groeseneken G and De Gendt S 2006 J. Appl. Phys. 100 093716
[8]	Heh D, Young C D and Bersuker G 2008 IEEE Electron Dev. Lett. 29 180
[9]	Tse K, Liu D, Xiong K and Robertson J 2007 Microelectron. Eng. 84 2028
[10]	Tse K and Robertson J 2007 Microelectron. Eng. 84 663
[11]	Crupi I, Degraeve R, Govoreanu B, Brunco D, Roussel P and Houdt J 2006 IEEE Trans. Device Mater. Rel. 6 509
[12]	Degraeve R, Cho M, Govoreanu B, Kaczer B, Zahid M B, van Houdt J, Jurczak M and Groeseneken G 2008 Technol. Dig. Int. Electron. Devices Meet. p. 775
[13]	Zheng X, Fan S, Kang D, Zhang J, Cao Y, Ma X and Hao Y 2014 Chin. Phys. Lett. 31 127701
[14]	Zheng X F, Zhang W D, Govoreanu B, Zhang J F and van Houdt J 2010 IEEE Electron. Dev. Lett. 57 2484
[15]	Young C D, Choi R, Sim J H, Lee B H, Zeitzoff P, Zhao B, Matthews K, Brown G A and Bersuker G 2005 IEEE Annual International Reliability Physics Symposium 75
[16]	Gavartin J L, Ramo D M, Shluger A L, Bersuker G and Lee B 2006 Appl. Phys. Lett. 89 082908
[17]	Cartier E, Linder B P, Narayanan V and Paruchuri V K 2006 Technol. Dig. Int. Electron. Devices Meet. p. 57
[18]	Agustin M P, Bersuker G, Foran B, Boatner L A and Stemmer S 2006 J. Appl. Phys. 100 024103
[19]	Young C D, Heh D, Nadkarni S V, Choi R, Peterson J J, Barnett J, Lee B H and Bersuker G 2006 IEEE Trans. Device Mater. Rel. 6 123

[1]	Characterization and application in XRF of HfO₂-coated glass monocapillary based on atomic layer deposition Yan-Li Li(李艳丽), Ya-Bing Wang(王亚冰), Wei-Er Lu(卢维尔), Xiang-Dong Kong(孔祥东), Li Han(韩立), and Hui-Bin Zhao(赵慧斌). Chin. Phys. B, 2021, 30(5): 050703.
[2]	Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO₂ and Al₂O₃ gate insulators Yao-Peng Zhao(赵垚澎), Chong Wang(王冲), Xue-Feng Zheng(郑雪峰), Xiao-Hua Ma(马晓华), Kai Liu(刘凯), Ang Li(李昂), Yun-Long He(何云龙), Yue Hao(郝跃). Chin. Phys. B, 2020, 29(8): 087304.
[3]	Realizing photomultiplication-type organic photodetectors based on C₆₀-doped bulk heterojunction structure at low bias Wei Gong(龚伟), Tao An(安涛), Xinying Liu(刘欣颖), Gang Lu(卢刚). Chin. Phys. B, 2019, 28(3): 038501.
[4]	Laser-induced damage threshold in HfO₂/SiO₂ multilayer films irradiated by β-ray Mei-Hua Fang(方美华), Peng-Yu Tian(田鹏宇), Mao-Dong Zhu(朱茂东), Hong-Ji Qi(齐红基), Tao Fei(费涛), Jin-Peng Lv(吕金鹏), Hui-Ping Liu(刘会平). Chin. Phys. B, 2019, 28(2): 024215.
[5]	Improved performance of Au nanocrystal nonvolatile memory by N₂-plasma treatment on HfO₂ blocking layer Chen Wang(王尘), Yi-Hong Xu(许怡红), Song-Yan Chen(陈松岩), Cheng Li(李成), Jian-Yuan Wang(汪建元), Wei Huang(黄巍), Hong-Kai Lai(赖虹凯), Rong-Rong Guo(郭榕榕). Chin. Phys. B, 2018, 27(6): 067303.
[6]	Structural and electrical properties of reactive magnetron sputtered yttrium-doped HfO₂ films Yu Zhang(张昱), Jun Xu(徐军), Da-Yu Zhou(周大雨), Hang-Hang Wang(王行行), Wen-Qi Lu(陆文琪), Chi-Kyu Choi. Chin. Phys. B, 2018, 27(4): 048103.
[7]	Research on the radiation hardened SOI devices with single-step Si ion implantation Li-Hua Dai(戴丽华), Da-Wei Bi(毕大炜), Zhi-Yuan Hu(胡志远), Xiao-Nian Liu(刘小年), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌). Chin. Phys. B, 2018, 27(4): 048503.
[8]	Schamel equation in an inhomogeneous magnetized sheared flow plasma with q-nonextensive trapped electrons Shaukat Ali Shan, Qamar-ul-Haque. Chin. Phys. B, 2018, 27(2): 025203.
[9]	Electronic structures and optical properties of HfO₂-TiO₂ alloys studied by first-principles GGA+ U approach Jin-Ping Li(李金平), Song-He Meng(孟松鹤), Cheng Yang(杨程), Han-Tao Lu(陆汉涛), Takami Tohyama(遠山貴巳). Chin. Phys. B, 2018, 27(2): 027101.
[10]	Crystallization behaviors of ultrathin Al-doped HfO₂ amorphous films grown by atomic layer deposition Xue-Li Ma(马雪丽), Hong Yang(杨红), Jin-Juan Xiang(项金娟), Xiao-Lei Wang(王晓磊), Wen-Wu Wang(王文武), Jian-Qi Zhang(张建齐), Hua-Xiang Yin(殷华湘), Hui-Long Zhu(朱慧珑), Chao Zhao(赵超). Chin. Phys. B, 2017, 26(2): 027701.
[11]	Charge transport and bipolar switching mechanismin a Cu/HfO₂/Pt resistive switching cell Tingting Tan(谭婷婷), Tingting Guo(郭婷婷), Zhihui Wu(吴志会), Zhengtang Liu(刘正堂). Chin. Phys. B, 2016, 25(11): 117306.
[12]	Optimal migration path of Ag in HfO₂: A first-principles study Dai Yue-Hua (代月花), Chen Zhen (陈真), Jin Bo (金波), Li Ning (李宁), Li Xiao-Feng (李晓风). Chin. Phys. B, 2015, 24(7): 073101.
[13]	Energy distribution extraction of negative charges responsible for positive bias temperature instability Ren Shang-Qing (任尚清), Yang Hong (杨红), Wang Wen-Wu (王文武), Tang Bo (唐波), Tang Zhao-Yun (唐兆云), Wang Xiao-Lei (王晓磊), Xu Hao (徐昊), Luo Wei-Chun (罗维春), Zhao Chao (赵超), Yan Jiang (闫江), Chen Da-Peng (陈大鹏), Ye Tian-Chun (叶甜春). Chin. Phys. B, 2015, 24(7): 077304.
[14]	Interfacial and electrical characteristics of a HfO₂/n-InAlAs MOS-capacitor with different dielectric thicknesses Guan He (关赫), Lv Hong-Liang (吕红亮), Guo Hui (郭辉), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Wu Li-Fan (武利翻). Chin. Phys. B, 2015, 24(12): 126701.
[15]	Structural, electronic, optical, elastic properties and Born effective charges of monoclinic HfO₂ from first-principles calculations Liu Qi-Jun (刘其军), Zhang Ning-Chao (张宁超), Liu Fu-Sheng (刘福生), Liu Zheng-Tang (刘正堂). Chin. Phys. B, 2014, 23(4): 047101.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Distribution of electron traps in SiO2/HfO2 nMOSFET

Cite this article:

Online attention

Distribution of electron traps in SiO₂/HfO₂ nMOSFET