Porous AlN films grown on C-face SiC by hydride vapor phase epitaxy

doi:10.1088/1674-1056/ac597e

Abstract We report the growth of porous AlN films on C-face SiC substrates by hydride vapor phase epitaxy (HVPE). The influences of growth condition on surface morphology, residual strain and crystalline quality of AlN films have been investigated. With the increase of the V/III ratio, the growth mode of AlN grown on C-face 6H-SiC substrates changes from step-flow to pit-hole morphology. Atomic force microscopy (AFM), scanning electron microscopy (SEM) and Raman analysis show that cracks appear due to tensile stress in the films with the lowest V/III ratio and the highest V/III ratio with a thickness of about 3 μm. In contrast, under the medium V/III ratio growth condition, the porous film can be obtained. Even when the thickness of the porous AlN film is further increased to 8 μm, the film remains porous and crack-free, and the crystal quality is improved.

Keywords: hydride vapor phase epitaxy (HVPE) porous AlN

Received: 19 October 2021
Revised: 27 January 2022
Accepted manuscript online: 02 March 2022

PACS:	68.55.-a	(Thin film structure and morphology)
	81.15.-z	(Methods of deposition of films and coatings; film growth and epitaxy)
	61.72.-y	(Defects and impurities in crystals; microstructure)

Corresponding Authors: Jun Huang, Ke Xu
E-mail: junhuang2008@sinano.ac.cn;kxu2006@sinano.ac.cn

Cite this article:

Jiafan Chen(陈家凡), Jun Huang(黄俊), Didi Li(李迪迪), and Ke Xu(徐科) Porous AlN films grown on C-face SiC by hydride vapor phase epitaxy 2022 Chin. Phys. B 31 076802

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Porous AlN films grown on C-face SiC by hydride vapor phase epitaxy

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