Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors

doi:10.1088/1674-1056/25/3/038501

Abstract The effect of lateral structure parameters of transistors including emitter width, emitter length, and emitter stripe number on the performance parameters of the active inductor (AI), such as the effective inductance L_s, quality factor Q, and self-resonant frequency ω ₀ is analyzed based on 0.35-μm SiGe BiCMOS process. The simulation results show that for AI operated under fixed current density J_C, the HBT lateral structure parameters have significant effect on L_s but little influence on Q and ω ₀, and the larger L_s can be realized by the narrow, short emitter stripe and few emitter stripes of SiGe HBTs. On the other hand, for AI with fixed HBT size, smaller J_C is beneficial for AI to obtain larger L_s, but with a cost of smaller Q and ω ₀. In addition, under the fixed collector current I_C, the larger the size of HBT is, the larger L_s becomes, but the smaller Q and ω ₀ become. The obtained results provide a reference for selecting geometry of transistors and operational condition in the design of active inductors.

Keywords: SiGe HBT lateral structure parameters active inductor

Received: 10 October 2015
Revised: 08 November 2015
Accepted manuscript online:

PACS:	85.30.-z	(Semiconductor devices)
	85.30.Pq	(Bipolar transistors)
	85.40.Qx	(Microcircuit quality, noise, performance, and failure analysis)
	84.37.+q	(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))

Fund: Project supported by the Natural Science Foundation of Beijing, China (Grant Nos. 4142007 and 4122014), the National Natural Science Foundation of China (Grant No. 61574010), and the Higher Educational Science and Technology Program of Shandong Province, China (Grant No. J13LN09).

Corresponding Authors: Wan-Rong Zhang
E-mail: wrzhang@bjut.edu.cn

Cite this article:

Yan-Xiao Zhao(赵彦晓), Wan-Rong Zhang(张万荣), Xin Huang(黄鑫), Hong-Yun Xie(谢红云), Dong-Yue Jin(金冬月), Qiang Fu(付强) Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors 2016 Chin. Phys. B 25 038501

[1]	Kia H B 2014 22nd Iranian Conference on Electrical Engineering, May 20-22, 2014, Tehran, p. 1
[2]	RejaM M, Moez K and Filanovosky I 2010 IEEE Transactions on Circuits and Systems: Express Briefs. 57 587
[3]	KumariK S and Bhuvan B 2011 International Conference on Devices and Communications, February 24-25, 2011, Mesra, India, p. 1
[4]	Zito D, Pepe D and Fonte A 2012 IEEE Microwave and Wireless Components Letters 22 138
[5]	Zhang S J, Zhang X X and Liu Y 2012 Chin. Phys. Lett. 29 084217
[6]	Selvathi D and Pown M 2014 International Conference on Communication and Network Technologies, December 18-19, 2014, Sivakasi, p. 296
[7]	Fu Q, Zhang W R, Jin D Y, Ding C B, Zhao Y X and Lu D 2014 Chin. Phys. B 23 114402
[8]	Lin C H, Su Y K, Juang Y Z, Chuang R W, Chang S J, Chen J F and Tu C H 2004 IEEE Transactions on Microwave Theory and Techniques 52 2153
[9]	Chao C H, Chin W K, Chien C H and Yi J C J 2002 IEEE Microwave and Wireless Components Letters 12 467
[10]	Robert F, Cathelin P, Diet A and Villegas M 2011 IEEE 12th Annual Wireless and Microwave Technology Conference (WAMICON), April 18-19, 2011, Clearwater Beach, FL, p. 1
[11]	Chun L L, A'ainA K B and Kordesch A V 2009 IEEE Transactions on Microwave Theory and Techniques 57 1915
[12]	Clarke K K and HessD T 1978 Communication Circuits: Analysis and Design, 2nd edn. (Addison-Wesley Publishing Company) p. 358

[1]	Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏), Hong-Xia Guo(郭红霞). Chin. Phys. B, 2019, 28(7): 076106.
[2]	Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor Jin-Xin Zhang(张晋新), Hong-Xia Guo(郭红霞), Xiao-Yu Pan(潘霄宇), Qi Guo(郭旗), Feng-Qi Zhang(张凤祁), Juan Feng(冯娟), Xin Wang(王信), Yin Wei(魏莹), Xian-Xiang Wu(吴宪祥). Chin. Phys. B, 2018, 27(10): 108501.
[3]	Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor Jin-Xin Zhang(张晋新), Chao-Hui He(贺朝会), Hong-Xia Guo(郭红霞), Pei Li(李培), Bao-Long Guo(郭宝龙), Xian-Xiang Wu(吴宪祥). Chin. Phys. B, 2017, 26(8): 088502.
[4]	Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model Ya-Bin Sun(孙亚宾), Jun Fu(付军), Yu-Dong Wang(王玉东), Wei Zhou(周卫), Wei Zhang(张伟), and Zhi-Hong Liu(刘志弘). Chin. Phys. B, 2016, 25(4): 048501.
[5]	A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT Qiang Fu(付强), Wan-Rong Zhang(张万荣), Dong-Yue Jin(金冬月), Yan-Xiao Zhao(赵彦晓), Xiao Wang(王肖). Chin. Phys. B, 2016, 25(12): 124401.
[6]	Model of transit time for SiGe HBT collector junction depletion-layer Hu Hui-Yong (胡辉勇), Zhang He-Ming (张鹤鸣), Dai Xian-Ying (戴显英), Jia Xin-Zhang (贾新章), Cui Xiao-Ying (崔晓英), Wang Wei (王伟), Ou Jian-Feng (区健锋), Wang Xi-Yuan (王喜媛). Chin. Phys. B, 2005, 14(7): 1439-1443.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors

Cite this article:

Online attention