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Temperature dependence of spin pumping in YIG/NiOx/W multilayer |
| Lijun Ni(倪丽君)1, Wenqiang Wang(王文强)1, Lichuan Jin(金立川)2, Jiandong Ye(叶建东)1, Hehe Gong(巩贺贺)1, Xiang Zhan(战翔)3, Zhendong Chen(陈振东)4, Longlong Zhang(张龙龙)1, Xingze Dai(代兴泽)1, Yao Li(黎遥)1, Rong Zhang(张荣)1, Yi Yang(杨燚)1, Huaiwu Zhang(张怀武)2, Ronghua Liu(刘荣华)3, Lina Chen(陈丽娜)5,†, and Yongbing Xu(徐永兵)1,6,‡ |
1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
3 Jiangsu Provincial Key Laboratory for Nanotechnology, School of Physics, Nanjing University, Nanjing 210093, China;
4 Jiangsu Key Laboratory of Opto-Electronic Technology, Center for Quantum Transport and Thermal Energy Science, School of Physics and Technology, Nanjing Normal University, Nanjing 210023, China;
5 School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
6 York-Nanjing Joint Centre for Spintronics and NanoEngineering, Department of Electronic Engineering, University of York, York YO10 5DD, United Kingdom |
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Abstract We report the temperature dependence of the spin pumping effect for Y3Fe5O12 (YIG, 0.9 μm)/NiO (tNiO)/W (6 nm) (tNiO = 0 nm, 1 nm, 2 nm, and 10 nm) heterostructures. All samples exhibit a strong temperature-dependent inverse spin Hall effect (ISHE) signal Ic and sensitivity to the NiO layer thickness. We observe a dramatic decrease of Ic with inserting thin NiO layer between YIG and W layers indicating that the inserting of NiO layer significantly suppresses the spin transport from YIG to W. In contrast to the noticeable enhancement in YIG/NiO (tNiO ≈ 1-2 nm)/Pt, the suppression of spin transport may be closely related to the specific interface-dependent spin scattering, spin memory loss, and spin conductance at the NiO/W interface. Besides, the Ic of YIG/NiO/W exhibits a maximum near the TN of the AF NiO layer because the spins are transported dominantly by incoherent thermal magnons.
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Received: 05 January 2022
Revised: 15 March 2022
Accepted manuscript online: 01 April 2022
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PACS:
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85.75.-d
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(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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75.75.Cd
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(Fabrication of magnetic nanostructures)
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72.25.Mk
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(Spin transport through interfaces)
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32.30.Dx
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(Magnetic resonance spectra)
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| Fund: We acknowledge support from the National Natural Science Foundation of China (Grant Nos. 11774160, 61427812, 61805116, 12004171, 61774081, and 62171096), the Natural Science Foundation of Jiangsu Province of China (Grant No. BK20192006), the National Key Scientific Instrument and Equipment Development Project of China (Grant No. 51827802), the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK20180056 and BK20200307), the Applied Basic Research Programs of the Science and Technology Commission Foundation of Jiangsu Province, China (Grant No. BK20200309), the Open Research Fund of Jiangsu Provincial Key Laboratory for Nanotechnology, the Scientific Foundation of Nanjing University of Posts and Telecommunications (NUPTSF) (Grant No. NY220164), and the State Key R&D Project of Guangdong, China (Grant No. 2020B010174002). |
Corresponding Authors:
Lina Chen, Yongbing Xu
E-mail: chenlina@njupt.edu.cn;ybxu@nju.edu.cn
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Cite this article:
Lijun Ni(倪丽君), Wenqiang Wang(王文强), Lichuan Jin(金立川), Jiandong Ye(叶建东), Hehe Gong(巩贺贺), Xiang Zhan(战翔), Zhendong Chen(陈振东), Longlong Zhang(张龙龙), Xingze Dai(代兴泽), Yao Li(黎遥), Rong Zhang(张荣), Yi Yang(杨燚), Huaiwu Zhang(张怀武), Ronghua Liu(刘荣华), Lina Chen(陈丽娜), and Yongbing Xu(徐永兵) Temperature dependence of spin pumping in YIG/NiOx/W multilayer 2022 Chin. Phys. B 31 128504
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