Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range

doi:10.1088/1674-1056/23/9/097307

Abstract The behavior of Schottky contacts in AlGaN/GaN high electron mobility transistors (HEMTs) is investigated by temperature-dependent current-voltage (T-I-V) measurements from 300 K to 473 K. The ideality factor and barrier height determined based on the thermionic emission (TE) theory are found to be strong functions of temperature, while present a great deviation from the theoretical value, which can be expounded by the barrier height inhomogeneities. In order to determine the forward current transport mechanisms, the experimental data are analyzed using numerical fitting method, considering the temperature-dependent series resistance. It is observed that the current flow at room temperature can be attributed to the tunneling mechanism, while thermionic emission current gains a growing proportion with an increase in temperature. Finally, the effective barrier height is derived based on the extracted thermionic emission component, and an evaluation of the density of dislocations is made from the I-V characteristics, giving a value of 1.49×10⁷ cm^-2.

Keywords: AlGaN/GaN HEMTs Schottky contacts forward current transport mechanism temperature dependence

Received: 18 March 2014
Revised: 08 April 2014
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	07.20.Dt	(Thermometers)
	85.30.Hi	(Surface barrier, boundary, and point contact devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61334002) and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory of China (Grant No. ZHD201206).

Corresponding Authors: Hao Yue
E-mail: yhao@xidian.edu.cn

Cite this article:

Wu Mei (武玫), Zheng Da-Yong (郑大勇), Wang Yuan (王媛), Chen Wei-Wei (陈伟伟), Zhang Kai (张凯), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range 2014 Chin. Phys. B 23 097307

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Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range

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